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ST STW26N60M2
| Manufacturer | |
| MPN | STW26N60M2 |
| LCSC Part # | C2970366 |
| Packaging | TO-247 |
| Customer # | |
| Key Attributes | 600V 20A 4V 169W 165mΩ@10V 1 N-channel N-Channel TO-247 Single FETs, MOSFETs RoHS |
| Datasheet |  ST STW26N60M2 |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-247 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Output Capacitance(Coss) | 88pF | |
| Current - Continuous Drain(Id) | 20A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 169W | |
| Reverse Transfer Capacitance (Crss@Vds) | 2pF | |
| RDS(on) | 165mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.36nF | |
| Gate Charge(Qg) | 34nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-247 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Output Capacitance(Coss) | 88pF | |
| Current - Continuous Drain(Id) | 20A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 169W | |
| Reverse Transfer Capacitance (Crss@Vds) | 2pF | |
| RDS(on) | 165mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.36nF | |
| Gate Charge(Qg) | 34nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
These devices are N-channel power MOSFETs developed using MDmesh™ M2 technology. Thanks to their stripe layout and improved vertical structure, these devices feature low on-resistance and optimized switching characteristics, making them suitable for demanding high-efficiency converters.
Features
AI Translation
- Ultra-low gate charge
- Excellent output capacitance (Coss) characteristics
- 100% avalanche tested
- Zener protection
Applications
AI Translation
- Switching applications
In-Stock: 15
15 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 6.7585 | $ 6.76 |
| 10+ | $ 6.6399 | $ 66.40 |
| 30+ | $ 6.5603 | $ 196.81 |
| 100+ | $ 6.4823 | $ 648.23 |
Standard Packaging600/Full Tube | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-247 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Output Capacitance(Coss) | 88pF | |
| Current - Continuous Drain(Id) | 20A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 169W | |
| Reverse Transfer Capacitance (Crss@Vds) | 2pF | |
| RDS(on) | 165mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.36nF | |
| Gate Charge(Qg) | 34nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-247 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Output Capacitance(Coss) | 88pF | |
| Current - Continuous Drain(Id) | 20A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 169W | |
| Reverse Transfer Capacitance (Crss@Vds) | 2pF | |
| RDS(on) | 165mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.36nF | |
| Gate Charge(Qg) | 34nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
These devices are N-channel power MOSFETs developed using MDmesh™ M2 technology. Thanks to their stripe layout and improved vertical structure, these devices feature low on-resistance and optimized switching characteristics, making them suitable for demanding high-efficiency converters.
Features
AI Translation
- Ultra-low gate charge
- Excellent output capacitance (Coss) characteristics
- 100% avalanche tested
- Zener protection
Applications
AI Translation
- Switching applications
C2970366 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| STW28N65M2 | ST | TO-247 | 52 | $ 3.7441 | ||
| STW27N60M2-EP | ST | TO-247 | 3 | $ 2.9212 | ||
| STW28N60DM2 | ST | TO-247 | 26 | $ 6.7682 | ||
| IPW60R099CM8XKSA1 | Infineon | TO-247-3 | 5 | $ 6.2776 | ||
| NCE65T180T | NCE | TO-247 | 233 | $ 2.7814 | ||
| IPW60R190E6FKSA1 | Infineon | TO-247-3-1 | 13 | $ 7.2235 | ||
| APT6029BFLLG-VB | VBsemi Elec | TO-247AC | 10 | $3.2158 $3.7832 | ||
| FCH190N65F-F155-VB | VBsemi Elec | TO-247AC | 10 | $3.2158 $3.7832 | ||
| APT6029BLLG-VB | VBsemi Elec | TO-247AC | 6 | $3.0816 $3.6254 | ||
| IPW60R105CFD7XKSA1-VB | VBsemi Elec | TO-247AC | 5 | $3.2158 $3.7832 |