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EDA ModelsEasyEDA
onsemi FQP8N80C
| Manufacturer | |
| MPN | FQP8N80C |
| LCSC Part # | C2704 |
| Packaging | TO-220 |
| Customer # | |
| Key Attributes | N-Channel, Current: 8.0A, Voltage: 800V |
| Datasheet |  onsemi FQP8N80C |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-220 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 800V | |
| Output Capacitance(Coss) | 175pF | |
| Current - Continuous Drain(Id) | 8A | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Pd - Power Dissipation | 4.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 17pF | |
| RDS(on) | 1.55Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.05nF | |
| Gate Charge(Qg) | 45nC | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-220 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 800V | |
| Output Capacitance(Coss) | 175pF | |
| Current - Continuous Drain(Id) | 8A | |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 4.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 17pF | |
| RDS(on) | 1.55Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.05nF | |
| Gate Charge(Qg) | 45nC | |
| Type | N-Channel |
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Introduction
AI Translation
This N-channel enhancement-mode power MOSFET is fabricated using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology is specifically optimized for low on-resistance, delivering superior switching performance and high avalanche energy ruggedness. These devices are suitable for switch-mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Features
AI Translation
- 8.0 A, 800 V, R DS(on) = 1.55 Ω (max) at V GS = 10 V, I D = 4.0 A
- Low gate charge (typical 35 nC)
- Low C rss (typical 13 pF)
- 100% avalanche tested
Applications
AI Translation
- Switching mode power supplies
- Active power factor correction (PFC)
- Electronic lamp ballasts
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 4.0844 | $ 4.08 |
| 10+ | $ 3.6392 | $ 36.39 |
| 30+ | $ 3.3598 | $ 100.79 |
| 100+ | $ 3.0738 | $ 307.38 |
| 500+ | $ 2.9439 | $ 1471.95 |
| 1,000+ | $ 2.8886 | $ 2888.60 |
Standard Packaging50/Full Tube | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-220 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 800V | |
| Output Capacitance(Coss) | 175pF | |
| Current - Continuous Drain(Id) | 8A | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Pd - Power Dissipation | 4.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 17pF | |
| RDS(on) | 1.55Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.05nF | |
| Gate Charge(Qg) | 45nC | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-220 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 800V | |
| Output Capacitance(Coss) | 175pF | |
| Current - Continuous Drain(Id) | 8A | |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 4.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 17pF | |
| RDS(on) | 1.55Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.05nF | |
| Gate Charge(Qg) | 45nC | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
This N-channel enhancement-mode power MOSFET is fabricated using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology is specifically optimized for low on-resistance, delivering superior switching performance and high avalanche energy ruggedness. These devices are suitable for switch-mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Features
AI Translation
- 8.0 A, 800 V, R DS(on) = 1.55 Ω (max) at V GS = 10 V, I D = 4.0 A
- Low gate charge (typical 35 nC)
- Low C rss (typical 13 pF)
- 100% avalanche tested
Applications
AI Translation
- Switching mode power supplies
- Active power factor correction (PFC)
- Electronic lamp ballasts
C2704 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| CMF7N80A | Cmos | TO-220F | 135 | $0.5689 $0.5988 | ||
| JCS9N90FT | Jilin Sino-Microelectronics | TO-220MF | 45 | $ 0.9449 | ||
| MS10N100HGT1 | MASPOWER | TO-220 | 16 | $1.1314 $1.1909 | ||
| MS10N100HGT0 | MASPOWER | TO-220 | 10 | $1.5404 $1.6214 | ||
| STF25N80K5 | ST | TO-220-3 | 3 | $ 9.3091 | ||
| FQP9N90C | onsemi | TO-220 | 0 | $ 6.7276 | ||
| STP9NK90Z | ST | TO-220-3 | 0 | $ 2.926 | ||
| STP11NM80 | ST | TO-220 | 0 | $ 4.0892 | ||
| STP18NM80 | ST | TO-220 | 0 | $ 6.3328 | ||
| IXFP10N80P | Littelfuse/IXYS | TO-220-3 | 0 | $ 6.5704 |