- Diagrama de pinos
- Footprint
STANSON Tech. STP4403
| Fabricante | STANSON Tech.Asian Brands |
| Cód. da peça | STP4403 |
| Nº LCSC | C2682811 |
| Emb. | SOP-8 |
| Número do Cliente | |
| Atrib. princ. | MOSFET P-CH 20V 10A SOP-8 |
| Folha de Dados |  STANSON Tech. STP4403 |
| Conformidade RoHS | 1 documentos disponíveis |
| Peças alternativas | 5 |
Especificações do Produto
| Tipo | Descrição | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | STANSON Tech. | |
| Emb. | SOP-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 520pF | |
| Current - Continuous Drain(Id) | 10A | |
| Gate Threshold Voltage (Vgs(th)) | 900mV | |
| Pd - Power Dissipation | 2.8W | |
| Reverse Transfer Capacitance (Crss@Vds) | 480pF | |
| RDS(on) | 48mΩ@1.8V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 2.67nF | |
| Gate Charge(Qg) | 45nC@5V | |
| Type | P-Channel |
| Tipo | Descrição | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | STANSON Tech. | |
| Emb. | SOP-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 520pF | |
| Current - Continuous Drain(Id) | 10A | |
| Gate Threshold Voltage (Vgs(th)) | 900mV |
| Tipo | Descrição | |
|---|---|---|
| Pd - Power Dissipation | 2.8W | |
| Reverse Transfer Capacitance (Crss@Vds) | 480pF | |
| RDS(on) | 48mΩ@1.8V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 2.67nF | |
| Gate Charge(Qg) | 45nC@5V | |
| Type | P-Channel |
Descrição
STP4403 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.
Recursos
- -20V/-10.0A, RDS(ON)=30mΩ @ VGS=-4.5V
- -20V/-8.6A, RDS(ON)=35mΩ @ VGS=-2.5V
- -20V/-7.6A, RDS(ON) = 48mΩ @ VGS=-1.8V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
- SOP-8 package design
Aplicações
| Qtd. | Preço unit. | Valor total |
|---|---|---|
| 5+ | $ 0.1502$ 0.0751 | $ 0.38 |
| 50+ | $ 0.1196$ 0.0598 | $ 2.99 |
| 150+ | $ 0.1044$ 0.0522 | $ 7.83 |
| 500+ | $ 0.0929$ 0.0465 | $ 23.25 |
| 2,500+ | $ 0.0837$ 0.0419 | $ 104.75 |
| 5,000+ | $ 0.0792$ 0.0396 | $ 198.00 |
Encapsulamento Padrão2500/Full Reel | ||
Especificações do Produto
| Tipo | Descrição | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | STANSON Tech. | |
| Emb. | SOP-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 520pF | |
| Current - Continuous Drain(Id) | 10A | |
| Gate Threshold Voltage (Vgs(th)) | 900mV | |
| Pd - Power Dissipation | 2.8W | |
| Reverse Transfer Capacitance (Crss@Vds) | 480pF | |
| RDS(on) | 48mΩ@1.8V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 2.67nF | |
| Gate Charge(Qg) | 45nC@5V | |
| Type | P-Channel |
| Tipo | Descrição | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | STANSON Tech. | |
| Emb. | SOP-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 520pF | |
| Current - Continuous Drain(Id) | 10A | |
| Gate Threshold Voltage (Vgs(th)) | 900mV |
| Tipo | Descrição | |
|---|---|---|
| Pd - Power Dissipation | 2.8W | |
| Reverse Transfer Capacitance (Crss@Vds) | 480pF | |
| RDS(on) | 48mΩ@1.8V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 2.67nF | |
| Gate Charge(Qg) | 45nC@5V | |
| Type | P-Channel |
Descrição
STP4403 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.
Recursos
- -20V/-10.0A, RDS(ON)=30mΩ @ VGS=-4.5V
- -20V/-8.6A, RDS(ON)=35mΩ @ VGS=-2.5V
- -20V/-7.6A, RDS(ON) = 48mΩ @ VGS=-1.8V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
- SOP-8 package design
Aplicações
C2682811 Biblioteca EasyEDA
Conformidade & Códigos de Exportação
| Tipo | Detalhes |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Detalhes |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Detalhes |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |