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onsemi FDN358P
| Manufacturer | |
| MPN | FDN358P |
| LCSC Part # | C24848 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | MOSFET P-CH 30V 1.5A SOT-23 |
| Datasheet |  onsemi FDN358P |
| RoHS Compliance | 2 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 56pF | |
| Current - Continuous Drain(Id) | 1.5A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 460mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 26pF | |
| RDS(on) | 200mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 182pF | |
| Gate Charge(Qg) | 5.6nC@10V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 56pF | |
| Current - Continuous Drain(Id) | 1.5A | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 460mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 26pF | |
| RDS(on) | 200mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 182pF | |
| Gate Charge(Qg) | 5.6nC@10V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
This P-Channel Logic Level MOSFET is produced using advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Features
AI Translation
- Low gate charge (4 nC typical)
- High performance trench technology for extremely low RDs(ON)
- High power version of industry Standard SOT-23 package. Identical pin-out to SOT-23 with 30% higher power handling capability
Applications
AI Translation
- Portable electronics applications: load switching and power management, battery charging circuits, and DC/DC conversion
In-Stock: 5,645
5,645 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.2861 | $ 1.43 |
| 50+ | $ 0.222 | $ 11.10 |
| 150+ | $ 0.1946 | $ 29.19 |
| 500+ | $ 0.1604 | $ 80.20 |
| 3,000+ | $ 0.1451 | $ 435.30 |
| 6,000+ | $ 0.136 | $ 816.00 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 56pF | |
| Current - Continuous Drain(Id) | 1.5A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 460mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 26pF | |
| RDS(on) | 200mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 182pF | |
| Gate Charge(Qg) | 5.6nC@10V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 56pF | |
| Current - Continuous Drain(Id) | 1.5A | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 460mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 26pF | |
| RDS(on) | 200mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 182pF | |
| Gate Charge(Qg) | 5.6nC@10V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
This P-Channel Logic Level MOSFET is produced using advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Features
AI Translation
- Low gate charge (4 nC typical)
- High performance trench technology for extremely low RDs(ON)
- High power version of industry Standard SOT-23 package. Identical pin-out to SOT-23 with 30% higher power handling capability
Applications
AI Translation
- Portable electronics applications: load switching and power management, battery charging circuits, and DC/DC conversion
C24848 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| FDN358P(UMW) | UMW | SOT-23 | 6,190 | $ 0.0461 | ||
| PJM2309PSA | PJSEMI | SOT-23 | 840 | $ 0.0772 | ||
| 2309 | High Diode | SOT-23 | 2,540 | $ 0.034 | ||
| IRLML5103TRPBF | TECH PUBLIC | SOT-23 | 7,735 | $0.0756 $0.0795 | ||
| SI2309S | BORN | SOT-23-3L | 13,270 | $ 0.0677 | ||
| WST02P06 | Winsok Semicon | SOT-23-3L | 4,200 | $ 0.0908 | ||
| WST03P10 | Winsok Semicon | SOT-23-3L | 410 | $ 0.2245 | ||
| ACMSP2303T-HF | Comchip | SOT-23 | 0 | $ 0.2762 | ||
| YFW2303 | YFW | SOT-23 | 0 | $0.0297 $0.0312 | ||
| AP6P250N | APEC | SOT-23S | 0 | $ 0.1049 |