Infineon CY15V104QN50BFXITXUMA1

The EXCELON™ LP F-RAM CY15X104QI is a low-power 4-megabit nonvolatile memory built on an advanced ferroelectric process. The ferroelectric random access memory (EXCELON™ LP F-RAM) is nonvolatile and performs reads and writes like a RAM. It delivers reliable data retention of 151 years while eliminating the complexity, overhead, and system-level reliability concerns associated with serial Flash, EEPROM, and other nonvolatile memories. Unlike serial Flash and EEPROM, the CY15X104QI performs write operations at bus speed with no write delay. Data is written to the memory array immediately upon successful transfer to the device, and the next bus cycle can begin without data polling. In addition, the device offers outstanding write endurance compared to other nonvolatile memories. The CY15X104QI supports 10¹⁵ read/write cycles — 10 billion more write cycles than EEPROM. These characteristics make the CY15X104QI ideal for nonvolatile memory applications requiring frequent or fast writes, such as data logging (where write cycle count may be critical) and industrial control applications where the long write times of serial Flash or EEPROM could result in data loss. As a hardware drop-in replacement for serial EEPROM or Flash, the CY15X104QI offers significant user benefits. It uses a high-speed SPI bus that complements the high-speed write capability of EXCELON™ LP F-RAM technology. The device integrates a read-only device ID and unique ID feature, enabling the host to identify the manufacturer, product density, product revision, and unique ID of each part. Additionally, the device provides a writable 8-byte serial number register that can be used to identify a specific board or system.

• 4-Megabit Ferroelectric RAM (EXCELON LP F-RAM), organized as 512K × 8
• Virtually unlimited endurance: 1 quadrillion (10^15) read/write cycles
• 151-year data retention
• Instant nonvolatile write
• Advanced high-reliability ferroelectric process
• Fast SPI
• Frequency up to 20 MHz
• Supports SPI Mode 0 (0,0) and Mode 3 (1,1)
• Sophisticated write protection scheme
• Hardware protection via WP pin
• Software protection via WRDI instruction
• Software block protection: 1/4, 1/2, or full array
• Device ID and serial number
• Manufacturer ID and product ID
• Device ID
• Serial number
• Dedicated 256-byte Special Sector EXCELON LP F-RAM
• Dedicated Special Sector write and read
• Memory contents survive up to three standard reflow cycles
• Low power consumption
• Active current: 1.2 mA typical at 20 MHz
• Standby current: 2.3 μA typical
• Deep power-down current: 0.70 μA typical
• Sleep mode current: 0.1 μA typical
• Power-up inrush current: 1.5 mA typical
• Low-voltage operation
• CY15V104Q!: VDD = 1.71 V to 1.89 V
• CY15B104QI: VDD = 1.8 V to 3.6 V
• Commercial and industrial operating temperature
• Commercial: 0°C to +70°C
• Industrial: -40°C to +85°C
• Packages
• 8-pin Grid array Quad Flat No-lead (GQFN) package
• 8-pin Ultra-thin Fine-pitch Land Grid Array (UFLGA) package
• RoHS compliant

• Data Acquisition
• Industrial Control