Images for reference only
EDA ModelsEasyEDA
micron MT46H16M32LFCX-5 IT:B
| Manufacturer | |
| MPN | MT46H16M32LFCX-5 IT:B |
| LCSC Part # | C20562467 |
| Packaging | 90-VFBGA (9x13) |
| Customer # | |
| Key Attributes | 512Mbit 1.7V~1.95V 200MHz LPDDR SDRAM 90-VFBGA (9x13) Memory RoHS |
| Datasheet |  micron MT46H16M32LFCX-5 IT:B |
| Alternative Parts | 1 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | micron | |
| Packaging | 90-VFBGA (9x13) | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Auto self-refresh;Built-in temperature sensor;Auto precharge function;Data mask function | |
| Refresh Current | - | |
| Memory Size | 512Mbit | |
| Voltage - Supply | 1.7V~1.95V | |
| Clock Frequency | 200MHz | |
| Memory Format | LPDDR SDRAM | |
| Current - Supply | - |
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | micron | |
| Packaging | 90-VFBGA (9x13) | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Auto self-refresh;Built-in temperature sensor;Auto precharge function;Data mask function | |
| Refresh Current | - |
| Type | Description | |
|---|---|---|
| Memory Size | 512Mbit | |
| Voltage - Supply | 1.7V~1.95V | |
| Clock Frequency | 200MHz | |
| Memory Format | LPDDR SDRAM | |
| Current - Supply | - |
Report an ErrorShow similar products (0) >
Features
AI Translation
- VDD / VDDQ = 1.70 - 1.95V
- 1.2V I/O option, VDDQ = 1.14 - 1.30V
- Bidirectional data strobe (DQS) per data byte
- Internal pipelined DDR architecture; two data accesses per clock cycle
- Differential clock inputs (CK and CK#)
- Commands input on each positive CK edge
- DQS edge-aligned with data on reads; DQS center-aligned with data on writes
- 4 internal banks for concurrent operation
- Data Mask (DM) for write data masking, one mask per byte
- Programmable Burst Length (BL): 2, 4, 8, or 16
- Concurrent auto-precharge option supported
- Auto refresh and self-refresh modes
- 1.8V LVCmos compatible inputs
- On-chip temperature sensor for self-refresh rate control
- Partial Array Self Refresh (PASR)
- Deep Power Down (DPD)
- Status Read Register (SRR)
- Selectable output Drive Strength (DS)
- Clock stop feature
- 64ms refresh
Out of Stock
Notify Me
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 35.36 | $ 35.36 |
| 200+ | $ 14.1085 | $ 2821.70 |
| 500+ | $ 13.6377 | $ 6818.85 |
| 1,000+ | $ 13.4053 | $ 13405.30 |
Standard Packaging1000/Full Bag | ||
Better price for more quantity?
$
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | micron | |
| Packaging | 90-VFBGA (9x13) | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Auto self-refresh;Built-in temperature sensor;Auto precharge function;Data mask function | |
| Refresh Current | - | |
| Memory Size | 512Mbit | |
| Voltage - Supply | 1.7V~1.95V | |
| Clock Frequency | 200MHz | |
| Memory Format | LPDDR SDRAM | |
| Current - Supply | - |
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | micron | |
| Packaging | 90-VFBGA (9x13) | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Auto self-refresh;Built-in temperature sensor;Auto precharge function;Data mask function | |
| Refresh Current | - |
| Type | Description | |
|---|---|---|
| Memory Size | 512Mbit | |
| Voltage - Supply | 1.7V~1.95V | |
| Clock Frequency | 200MHz | |
| Memory Format | LPDDR SDRAM | |
| Current - Supply | - |
Report an ErrorShow similar products (0) >
Features
AI Translation
- VDD / VDDQ = 1.70 - 1.95V
- 1.2V I/O option, VDDQ = 1.14 - 1.30V
- Bidirectional data strobe (DQS) per data byte
- Internal pipelined DDR architecture; two data accesses per clock cycle
- Differential clock inputs (CK and CK#)
- Commands input on each positive CK edge
- DQS edge-aligned with data on reads; DQS center-aligned with data on writes
- 4 internal banks for concurrent operation
- Data Mask (DM) for write data masking, one mask per byte
- Programmable Burst Length (BL): 2, 4, 8, or 16
- Concurrent auto-precharge option supported
- Auto refresh and self-refresh modes
- 1.8V LVCmos compatible inputs
- On-chip temperature sensor for self-refresh rate control
- Partial Array Self Refresh (PASR)
- Deep Power Down (DPD)
- Status Read Register (SRR)
- Selectable output Drive Strength (DS)
- Clock stop feature
- 64ms refresh
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| Type | Details |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| MT46H16M32LFCX-5:B | micron | 90-VFBGA (9x13) | 0 | $ 24.9727 |