ROHM R6009RND3TL1
| Manufacturer | |
| MPN | R6009RND3TL1 |
| LCSC Part # | C20109031 |
| Packaging | TO-252 |
| Customer # | |
| Key Attributes | 600V 6A 7V 125W 665mΩ@15V TO-252 Single FETs, MOSFETs |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ROHM | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 6A | |
| Output Capacitance(Coss) | 31pF | |
| Gate Threshold Voltage (Vgs(th)) | 7V | |
| Pd - Power Dissipation | 125W | |
| RDS(on) | 665mΩ@15V | |
| Input Capacitance(Ciss) | 640pF | |
| Gate Charge(Qg) | 22nC@15V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ROHM | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 6A | |
| Output Capacitance(Coss) | 31pF |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 7V | |
| Pd - Power Dissipation | 125W | |
| RDS(on) | 665mΩ@15V | |
| Input Capacitance(Ciss) | 640pF | |
| Gate Charge(Qg) | 22nC@15V |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
Dual N-Channel MOSFET with Built-in Gate Resistors For Lithium-Ion Secondary Battery Protection Circuits
Features
AI Translation
- Fast reverse recovery time (trr)
- Low on-resistance
- Fast switching speed
- Simplified drive circuitry
- Lead-free plating; RoHS compliant
Applications
AI Translation
- Switching applications
Out of Stock
Notify Me
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.7554 | $ 0.76 |
| 200+ | $ 0.3019 | $ 60.38 |
| 500+ | $ 0.2924 | $ 146.20 |
| 1,000+ | $ 0.2861 | $ 286.10 |
Standard Packaging2500/Full Reel | ||
Better price for more quantity?
$
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ROHM | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 6A | |
| Output Capacitance(Coss) | 31pF | |
| Gate Threshold Voltage (Vgs(th)) | 7V | |
| Pd - Power Dissipation | 125W | |
| RDS(on) | 665mΩ@15V | |
| Input Capacitance(Ciss) | 640pF | |
| Gate Charge(Qg) | 22nC@15V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ROHM | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 6A | |
| Output Capacitance(Coss) | 31pF |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 7V | |
| Pd - Power Dissipation | 125W | |
| RDS(on) | 665mΩ@15V | |
| Input Capacitance(Ciss) | 640pF | |
| Gate Charge(Qg) | 22nC@15V |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
Dual N-Channel MOSFET with Built-in Gate Resistors For Lithium-Ion Secondary Battery Protection Circuits
Features
AI Translation
- Fast reverse recovery time (trr)
- Low on-resistance
- Fast switching speed
- Simplified drive circuitry
- Lead-free plating; RoHS compliant
Applications
AI Translation
- Switching applications
C20109031 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

