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BOURNS BIDNW30N60H3 product image
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BOURNS BIDNW30N60H3RoHS

Manufacturer
BOURNS
MPN
BIDNW30N60H3
LCSC Part #
C19945914
Packaging
-
Customer #
Key Attributes
230W 30A 600V FS (Field Stop) Single IGBTs RoHS
Datasheetpdf iconBOURNS BIDNW30N60H3
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QtyUnit Price(Reference Only)Total Amount
1+$ 3.1746$ 3.17
210+$ 1.2667$ 266.01
510+$ 1.2254$ 624.95
990+$ 1.2032$ 1191.17
Standard Packaging30/Full Tube
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/IGBTs/Single IGBTs
ManufacturerBOURNS
Packaging-
Td(off)67ns
Pd - Power Dissipation230W
Td(on)30ns
Current - Collector(Ic)30A
Collector-Emitter Breakdown Voltage (Vces)600V
Reverse Transfer Capacitance (Cres)32pF
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5V
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))1.65V
Reverse Recovery Time(trr)28ns
Collector Cut-Off Current (Ices)-
Switching Energy(Eoff)450uJ
Turn-On Energy (Eon)1.85mJ
Input Capacitance(Cies)1.78nF
Output Capacitance(Coes)100pF
Gate Charge(Qg)76nC@15V
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Introduction

AI Translation

The BIDNW30N60H3 IGBT combines MOS gate and bipolar transistor technologies, making it an ideal component for high-voltage and high-current applications. This device employs trench gate field-stop technology for improved dynamic characteristic control, while reducing collector-emitter saturation voltage (VCE(sat)) and switching losses.

Features

AI Translation
  • 600 V, 30 A, low collector-emitter saturation voltage (VCE(sat))
  • Advanced trench gate field-stop technology
  • Low switching losses
  • Fast switching
  • RoHS compliant

Applications

AI Translation
  • Switched-Mode Power Supply (SMPS)
  • Uninterruptible Power Supply (UPS)
  • Power Factor Correction (PFC)
  • Induction Heating