- Pinout
- Footprint
Images for reference only
EDA ModelsEasyEDA
ST STGW30H60DFB
| Manufacturer | |
| MPN | STGW30H60DFB |
| LCSC Part # | C183255 |
| Packaging | TO-247 |
| Customer # | |
| Key Attributes | IGBT 600V 60A TO-247 |
| Datasheet |  ST STGW30H60DFB |
| RoHS Compliance | 3 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | ST | |
| Packaging | TO-247 | |
| Td(off) | 146ns | |
| Pd - Power Dissipation | 260W | |
| Td(on) | 37ns | |
| Current - Collector(Ic) | 60A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | 76pF | |
| IGBT Type | FS (Field Stop) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 7V@1mA | |
| Operating Temperature | -55℃~+175℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 2V@30A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 53ns | |
| Switching Energy(Eoff) | 293uJ | |
| Turn-On Energy (Eon) | 383uJ | |
| Input Capacitance(Cies) | 3.659nF | |
| Output Capacitance(Coes) | 101pF | |
| Gate Charge(Qg) | 149nC |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | ST | |
| Packaging | TO-247 | |
| Td(off) | 146ns | |
| Pd - Power Dissipation | 260W | |
| Td(on) | 37ns | |
| Current - Collector(Ic) | 60A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | 76pF | |
| IGBT Type | FS (Field Stop) |
| Type | Description | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 7V@1mA | |
| Operating Temperature | -55℃~+175℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 2V@30A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 53ns | |
| Switching Energy(Eoff) | 293uJ | |
| Turn-On Energy (Eon) | 383uJ | |
| Input Capacitance(Cies) | 3.659nF | |
| Output Capacitance(Coes) | 101pF | |
| Gate Charge(Qg) | 149nC |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Features
AI Translation
- Maximum junction temperature: T_J = 175 ℃
- High speed switching series
- Minimized tail current
- Low saturation voltage: V_CE(sat) = 1.55 V (typ.) @ I_C = 30 A
- Tight parameter distribution
- Safe paralleling
- Positive V_CE(sat) temperature coefficient
- Low thermal resistance
- Very fast soft recovery antiparallel diode
Applications
AI Translation
- Photovoltaic inverters
- High frequency converters
In-Stock: 6
6 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 2.8429 | $ 2.84 |
| 10+ | $ 2.7699 | $ 27.70 |
| 30+ | $ 2.7212 | $ 81.64 |
| 100+ | $ 2.6725 | $ 267.25 |
Standard Packaging30/Full Tube | ||
Better price for more quantity?
$
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | ST | |
| Packaging | TO-247 | |
| Td(off) | 146ns | |
| Pd - Power Dissipation | 260W | |
| Td(on) | 37ns | |
| Current - Collector(Ic) | 60A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | 76pF | |
| IGBT Type | FS (Field Stop) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 7V@1mA | |
| Operating Temperature | -55℃~+175℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 2V@30A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 53ns | |
| Switching Energy(Eoff) | 293uJ | |
| Turn-On Energy (Eon) | 383uJ | |
| Input Capacitance(Cies) | 3.659nF | |
| Output Capacitance(Coes) | 101pF | |
| Gate Charge(Qg) | 149nC |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | ST | |
| Packaging | TO-247 | |
| Td(off) | 146ns | |
| Pd - Power Dissipation | 260W | |
| Td(on) | 37ns | |
| Current - Collector(Ic) | 60A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | 76pF | |
| IGBT Type | FS (Field Stop) |
| Type | Description | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 7V@1mA | |
| Operating Temperature | -55℃~+175℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 2V@30A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 53ns | |
| Switching Energy(Eoff) | 293uJ | |
| Turn-On Energy (Eon) | 383uJ | |
| Input Capacitance(Cies) | 3.659nF | |
| Output Capacitance(Coes) | 101pF | |
| Gate Charge(Qg) | 149nC |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Features
AI Translation
- Maximum junction temperature: T_J = 175 ℃
- High speed switching series
- Minimized tail current
- Low saturation voltage: V_CE(sat) = 1.55 V (typ.) @ I_C = 30 A
- Tight parameter distribution
- Safe paralleling
- Positive V_CE(sat) temperature coefficient
- Low thermal resistance
- Very fast soft recovery antiparallel diode
Applications
AI Translation
- Photovoltaic inverters
- High frequency converters
C183255 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Type | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| STGW30V60DF | ST | TO-247 | 30 | $ 6.068 | ||
| STGW30V60F | ST | TO-247 | 28 | $ 8.349 | ||
| GWA40MS120DF4AG | ST | TO-247 | 15 | $ 7.6666 | ||
| STGW40H120F2 | ST | TO-247-3 | 10 | $ 9.5008 | ||
| MLG60N65FUK | Minos | TO-247 | 108 | $ 1.7612 | ||
| STGWA50IH65DF | ST | TO-247 | 30 | $ 4.0822 | ||
| MSG50T65HHC0 | MASPOWER | TO-247 | 1 | $1.6483 $1.735 | ||
| STGWA30HP65FB | ST | TO-247-3 | 0 | $ 5.9081 | ||
| NGTB35N60FL2WG | onsemi | TO-247-3 | 0 | $ 2.6546 | ||
| NGTB35N65FL2WG | onsemi | TO-247 | 0 | $ 7.5578 |