Winbond W9816G6JB-5 TR

W9816G6JB is a high-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. W9816G6JB delivers a data bandwidth of up to 200M words per second. To fully comply with the personal computer industrial standard, W9816G6JB is sorted into the following speed grades: -5, -6, -6I, -7 and -7I. The -5 grade parts can run up to 200MHz/CL3. The -6 and -6I grade parts can run up to 166MHz/CL3 (the -6I industrial grade parts which is guaranteed to support -40℃ ≤ TA ≤ 85℃). The -7 and -7I grade parts can run up to 143MHz/CL3 (the -7I industrial grade parts which is guaranteed to support -40℃ ≤ TA ≤ 85℃). Accesses to the SDRAM are burst oriented. Consecutive memory location in one page can be accessed at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE command. Column addresses are automatically generated by the SDRAM internal counter in burst operation. Random column read is also possible by providing its address at each clock cycle. The multiple bank nature enables interleaving among internal banks to hide the precharging time. By having a programmable Mode Register, the system can change burst length, latency cycle, interleave or sequential burst to maximize its performance. W9816G6JB is ideal for main memory in high performance applications.

• 3.3V ± 0.3V power supply for -5/-6/-6I speed grades; 2.7V ~ 3.6V power supply for -7/-7I speed grades
• Up to 200 MHz Clock Frequency
• 524,288 words x 2 banks x 16 bits organization
• Self Refresh current: standard and low power
• CAS Latency: 2 and 3
• Burst Length: 1, 2, 4, 8 and Full Page
• Burst Read, Single Writes Mode
• Byte Data Controlled by LDQM, UDQM
• Auto-precharge and Controlled Precharge
• 2K Refresh Cycles/32 mS
• Interface: LVTTL
• Packaged in VFBGA 60 balls pitch = 0.65mm, using Lead free materials with RoHS compliant