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Nexperia PBSS5630PA,115

Manufacturer
Nexperia
MPN
PBSS5630PA,115
LCSC Part #
C552000
Packaging
SOT-1061
Customer #
Key Attributes
TRANS PNP 30V 6A SOT-1061
Datasheetpdf iconNexperia PBSS5630PA,115
RoHS Compliance1 documents available
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QtyUnit Price(Reference Only)Total Amount
1+$ 0.7149$ 0.71
10+$ 0.6012$ 6.01
30+$ 0.5524$ 16.57
100+$ 0.4923$ 49.23
500+$ 0.4647$ 232.35
1,000+$ 0.4484$ 448.40
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors
ManufacturerNexperia
PackagingSOT-1061
Operating Temperature-55℃~+150℃
Current - Collector Cutoff50uA
Transition frequency(fT)80MHz
Collector - Emitter Voltage VCEO30V
Emitter-Base Voltage VEBO7V
DC Current Gain230
Pd - Power Dissipation1.4W
Current - Collector(Ic)6A
Number1 PNP
typePNP
Vce Saturation(VCE(sat))235mV
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Introduction

AI Translation

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. NPN complement: PBSS4630PA.

Features

AI Translation
  • Low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
  • Exposed heat sink for excellent thermal and electrical conductivity
  • Leadless small SMD plastic package with medium power capability

Applications

AI Translation
  • Loadswitch
  • Battery-driven devices
  • Power management
  • Charging circuits
  • Power switches (e.g. motors, fans)