- 핀맵
- 풋프린트
실제 제품과 다를 수 있음
EDA 모델EasyEDA
NCE NCE65TF099T
| 제조업체 | NCEAsian Brands |
| 제조사 품번 | NCE65TF099T |
| LCSC 번호 | C502878 |
| 포장 | TO-247 |
| 고객 번호 | |
| 주요 제원 | MOSFET N-CH 650V 38A TO-247 |
| 데이터시트 |  NCE NCE65TF099T |
제품 사양
전체
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | NCE | |
| 포장 | TO-247 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 38A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Pd - Power Dissipation | 322W | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.5pF | |
| RDS(on) | 89mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.2nF | |
| Gate Charge(Qg) | 55nC@10V |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | NCE | |
| 포장 | TO-247 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 38A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| 타입 | 설명 | |
|---|---|---|
| Pd - Power Dissipation | 322W | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.5pF | |
| RDS(on) | 89mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.2nF | |
| Gate Charge(Qg) | 55nC@10V |
오류 신고유사 제품 보기 (0) >
개요
AI 번역
The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.
주요 특징
AI 번역
- Optimized body diode reverse recovery performance
- Low on-resistance and low conduction losses
- Small package
- Ultra Low Gate Charge cause lower driving requirements
- 100% Avalanche Tested
- ROHS compliant
응용 분야
AI 번역
- Power factor correction（PFC）
- Switched mode power supplies(SMPS)
- Uninterruptible Power Supply（UPS）
- LLC Half-bridge
재고 있음: 330
330 재고 있음, 당일 발송
최소값: 1배수: 1판매 단위: Piece
BOM 목록에 추가
| 수량 | 단가 | 총액 |
|---|---|---|
| 1+ | $ 3.2087 | $ 3.21 |
| 10+ | $ 2.6742 | $ 26.74 |
| 30+ | $ 2.3395 | $ 70.19 |
| 90+ | $ 1.9967 | $ 179.70 |
| 510+ | $ 1.8424 | $ 939.62 |
| 1,200+ | $ 1.7741 | $ 2128.92 |
표준 패키지30/Full Tube | ||
수량이 많을수록 더 좋은 가격?
$
제품 사양
전체
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | NCE | |
| 포장 | TO-247 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 38A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Pd - Power Dissipation | 322W | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.5pF | |
| RDS(on) | 89mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.2nF | |
| Gate Charge(Qg) | 55nC@10V |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | NCE | |
| 포장 | TO-247 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 38A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| 타입 | 설명 | |
|---|---|---|
| Pd - Power Dissipation | 322W | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.5pF | |
| RDS(on) | 89mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.2nF | |
| Gate Charge(Qg) | 55nC@10V |
오류 신고유사 제품 보기 (0) >
개요
AI 번역
The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.
주요 특징
AI 번역
- Optimized body diode reverse recovery performance
- Low on-resistance and low conduction losses
- Small package
- Ultra Low Gate Charge cause lower driving requirements
- 100% Avalanche Tested
- ROHS compliant
응용 분야
AI 번역
- Power factor correction（PFC）
- Switched mode power supplies(SMPS)
- Uninterruptible Power Supply（UPS）
- LLC Half-bridge
C502878 EasyEDA 라이브러리
컴플라이언스 & 수출 코드
| 타입 | 세부사항 |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| 타입 | 세부사항 |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| 타입 | 세부사항 |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |