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WILLSEMI WPM1485-6/TR
| Manufacturer | WILLSEMIAsian Brands |
| MPN | WPM1485-6/TR |
| LCSC Part # | C239697 |
| Packaging | DFN-6L(2x2) |
| Customer # | |
| Key Attributes | Single P-Channel, Current: -7.4A, Voltage: -12V |
| Datasheet |  WILLSEMI WPM1485-6/TR |
| Alternative Parts | 1 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | WILLSEMI | |
| Packaging | DFN-6L(2x2) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 12V | |
| Output Capacitance(Coss) | 570pF | |
| Current - Continuous Drain(Id) | 7.4A | |
| Gate Threshold Voltage (Vgs(th)) | 950mV | |
| Pd - Power Dissipation | 1.8W | |
| Reverse Transfer Capacitance (Crss@Vds) | 530pF | |
| RDS(on) | 50mΩ@1.8V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 2.62nF | |
| Gate Charge(Qg) | 30.75nC@4.5V | |
| Vgs | ±8V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | WILLSEMI | |
| Packaging | DFN-6L(2x2) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 12V | |
| Output Capacitance(Coss) | 570pF | |
| Current - Continuous Drain(Id) | 7.4A | |
| Gate Threshold Voltage (Vgs(th)) | 950mV |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 1.8W | |
| Reverse Transfer Capacitance (Crss@Vds) | 530pF | |
| RDS(on) | 50mΩ@1.8V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 2.62nF | |
| Gate Charge(Qg) | 30.75nC@4.5V | |
| Vgs | ±8V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
WPM1485 is a P-channel enhancement-mode MOSFET. Utilizing advanced trench technology and design, it delivers excellent RDS(ON) with low gate charge. The device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product WPM1485 is lead-free and halogen-free.
Features
AI Translation
- Trench technology
- Ultra-high density cell design
- Excellent on-resistance for higher DC current
- Ultra-low threshold voltage
- Compact DFN2×2-6L package
Applications
AI Translation
- Driver for relays, solenoids, motors, LEDs, etc.
- DC-DC converter circuits
- Power switches
- Load switches
- Charging
Out of Stock
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Minimum: 1Multiple: 1Sales Unit: Piece
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.2361 | $ 0.24 |
| 10+ | $ 0.211 | $ 2.11 |
| 30+ | $ 0.2003 | $ 6.01 |
| 100+ | $ 0.1869 | $ 18.69 |
| 500+ | $ 0.181 | $ 90.50 |
| 1,000+ | $ 0.1774 | $ 177.40 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | WILLSEMI | |
| Packaging | DFN-6L(2x2) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 12V | |
| Output Capacitance(Coss) | 570pF | |
| Current - Continuous Drain(Id) | 7.4A | |
| Gate Threshold Voltage (Vgs(th)) | 950mV | |
| Pd - Power Dissipation | 1.8W | |
| Reverse Transfer Capacitance (Crss@Vds) | 530pF | |
| RDS(on) | 50mΩ@1.8V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 2.62nF | |
| Gate Charge(Qg) | 30.75nC@4.5V | |
| Vgs | ±8V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | WILLSEMI | |
| Packaging | DFN-6L(2x2) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 12V | |
| Output Capacitance(Coss) | 570pF | |
| Current - Continuous Drain(Id) | 7.4A | |
| Gate Threshold Voltage (Vgs(th)) | 950mV |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 1.8W | |
| Reverse Transfer Capacitance (Crss@Vds) | 530pF | |
| RDS(on) | 50mΩ@1.8V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 2.62nF | |
| Gate Charge(Qg) | 30.75nC@4.5V | |
| Vgs | ±8V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
WPM1485 is a P-channel enhancement-mode MOSFET. Utilizing advanced trench technology and design, it delivers excellent RDS(ON) with low gate charge. The device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product WPM1485 is lead-free and halogen-free.
Features
AI Translation
- Trench technology
- Ultra-high density cell design
- Excellent on-resistance for higher DC current
- Ultra-low threshold voltage
- Compact DFN2×2-6L package
Applications
AI Translation
- Driver for relays, solenoids, motors, LEDs, etc.
- DC-DC converter circuits
- Power switches
- Load switches
- Charging
C239697 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| WPM2065A-6/TR | WILLSEMI | DFN2x2-6L | 3 | $ 0.4669 |