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Modelos EDAEasyEDA
SINO-IC SE2N7002E
| Fabricante | SINO-ICAsian Brands |
| N.º de pieza fab. | SE2N7002E |
| Nº LCSC | C238634 |
| Emb. | SOT-523-3 |
| Número de Cliente | |
| Atrib. clave | MOSFET N-CH 60V 200mA SOT-523-3 |
| Hoja de Datos |  SINO-IC SE2N7002E |
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | SINO-IC | |
| Emb. | SOT-523-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 8pF | |
| Current - Continuous Drain(Id) | 200mA | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 200mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 3pF | |
| RDS(on) | 7Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 25pF | |
| Gate Charge(Qg) | 600pC@10V | |
| Type | N-Channel |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | SINO-IC | |
| Emb. | SOT-523-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 8pF | |
| Current - Continuous Drain(Id) | 200mA | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Tipo | Descripción | |
|---|---|---|
| Pd - Power Dissipation | 200mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 3pF | |
| RDS(on) | 7Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 25pF | |
| Gate Charge(Qg) | 600pC@10V | |
| Type | N-Channel |
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En stock: 740
740 En stock, envío inmediato
Mínimo: 20Múltiplo: 20Unidad de venta: Piece
Añadir a la Lista BOM
| Cant. | Prec. unit. | Importo total |
|---|---|---|
| 20+ | $ 0.0236$ 0.0118 | $ 0.24 |
| 200+ | $ 0.0185$ 0.0093 | $ 1.86 |
| 600+ | $ 0.0157$ 0.0079 | $ 4.74 |
| 3,000+ | $ 0.014$ 0.0070 | $ 21.00 |
| 9,000+ | $ 0.0125$ 0.0063 | $ 56.70 |
| 21,000+ | $ 0.0117$ 0.0059 | $ 123.90 |
Encapsulado Estándar3000/Full Reel | ||
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Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | SINO-IC | |
| Emb. | SOT-523-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 8pF | |
| Current - Continuous Drain(Id) | 200mA | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 200mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 3pF | |
| RDS(on) | 7Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 25pF | |
| Gate Charge(Qg) | 600pC@10V | |
| Type | N-Channel |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | SINO-IC | |
| Emb. | SOT-523-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 8pF | |
| Current - Continuous Drain(Id) | 200mA | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Tipo | Descripción | |
|---|---|---|
| Pd - Power Dissipation | 200mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 3pF | |
| RDS(on) | 7Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 25pF | |
| Gate Charge(Qg) | 600pC@10V | |
| Type | N-Channel |
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C238634 Biblioteca EasyEDA
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Detalles |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |