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NCE NCE30H10
| Manufacturer | NCEAsian Brands |
| MPN | NCE30H10 |
| LCSC Part # | C190854 |
| Packaging | TO-220-3L |
| Customer # | |
| Key Attributes | MOSFET N-CH 30V 100A TO-220-3L |
| Datasheet |  NCE NCE30H10 |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | NCE | |
| Packaging | TO-220-3L | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 356pF | |
| Current - Continuous Drain(Id) | 100A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 110W | |
| Reverse Transfer Capacitance (Crss@Vds) | 308pF | |
| RDS(on) | 5.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | 70nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | NCE | |
| Packaging | TO-220-3L | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 356pF | |
| Current - Continuous Drain(Id) | 100A | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 110W | |
| Reverse Transfer Capacitance (Crss@Vds) | 308pF | |
| RDS(on) | 5.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | 70nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
NCE30H10 utilizes advanced trench technology and design to deliver excellent RDS(ON) with low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- VDS = 30V, ID = 100A
- RDS(ON) < 5.5 mΩ (typical 4 mΩ at VGS = 10V)
- High-density cell design for ultra-low RDS(ON)
- Fully characterized avalanche voltage and current
- High EAS with excellent stability and consistency
- Thermally efficient package
- Advanced process technology for high ESD capability
Applications
AI Translation
- Power switch applications
- Hard switching and high-frequency circuits
- Uninterruptible power supplies
In-Stock: 1
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.4527 | $ 0.45 |
| 10+ | $ 0.3491 | $ 3.49 |
| 50+ | $ 0.3029 | $ 15.15 |
| 100+ | $ 0.2471 | $ 24.71 |
| 500+ | $ 0.2232 | $ 111.60 |
| 1,000+ | $ 0.2073 | $ 207.30 |
Standard Packaging50/Full Tube | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | NCE | |
| Packaging | TO-220-3L | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 356pF | |
| Current - Continuous Drain(Id) | 100A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 110W | |
| Reverse Transfer Capacitance (Crss@Vds) | 308pF | |
| RDS(on) | 5.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | 70nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | NCE | |
| Packaging | TO-220-3L | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 356pF | |
| Current - Continuous Drain(Id) | 100A | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 110W | |
| Reverse Transfer Capacitance (Crss@Vds) | 308pF | |
| RDS(on) | 5.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | 70nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
NCE30H10 utilizes advanced trench technology and design to deliver excellent RDS(ON) with low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- VDS = 30V, ID = 100A
- RDS(ON) < 5.5 mΩ (typical 4 mΩ at VGS = 10V)
- High-density cell design for ultra-low RDS(ON)
- Fully characterized avalanche voltage and current
- High EAS with excellent stability and consistency
- Thermally efficient package
- Advanced process technology for high ESD capability
Applications
AI Translation
- Power switch applications
- Hard switching and high-frequency circuits
- Uninterruptible power supplies
C190854 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| NCE30H12 | NCE | TO-220-3L | 11 | $ 0.9319 | ||
| NCE40H12 | NCE | TO-220-3L | 288 | $ 0.8059 | ||
| NCE60H10 | NCE | TO-220-3L | 1,010 | $ 0.653 | ||
| NCE60H15A | NCE | TO-220-3L | 345 | $ 1.0301 | ||
| NCEP055N85 | NCE | TO-220 | 0 | $ 0.7651 | ||
| NCEP050N85 | NCE | TO-220 | 0 | $ 0.7874 | ||
| NCE01H11 | NCE | TO-220 | 0 | $ 1.4079 | ||
| NCEP60T12A | NCE | TO-220-3L | 0 | $ 1.0772 | ||
| NCEP040N85 | NCE | TO-220 | 0 | $ 1.6506 | ||
| NCEP033N85 | NCE | TO-220 | 0 | $ 1.0437 |