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JSMSEMI IRF7811AVTR-JSM
| Manufacturer | JSMSEMIAsian Brands |
| MPN | IRF7811AVTR-JSM |
| LCSC Part # | C18190897 |
| Packaging | SOP-8 |
| Customer # | |
| Key Attributes | 30V 11A 2.5V 1.5W 18mΩ@4.5V 1 N-channel N-Channel SOP-8 Single FETs, MOSFETs RoHS |
| Datasheet |  JSMSEMI IRF7811AVTR-JSM |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | SOP-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 183pF | |
| Current - Continuous Drain(Id) | 11A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 1.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 153pF | |
| RDS(on) | 18mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | 13.5nC@4.5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | SOP-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 183pF | |
| Current - Continuous Drain(Id) | 11A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 1.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 153pF | |
| RDS(on) | 18mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | 13.5nC@4.5V | |
| Type | N-Channel |
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Introduction
AI Translation
This N-channel MOSFET employs advanced trench technology and design to deliver excellent on-resistance RDS(on) with low gate charge, making it suitable for a wide range of applications.
Features
AI Translation
- Drain-source voltage VDS = 30 V, drain current ID = 11 A, on-resistance RDS(ON) < 10 mΩ at gate-source voltage VGS = 10 V
- Low gate charge
- RoHS-compliant devices available
- Advanced high cell density trench technology for ultra-low on-resistance RDS(ON)
- Excellent package thermal dissipation
Applications
AI Translation
- Power Management
- Portable Devices
- DC/DC Converters
- Load Switches
- Digital Still Cameras (DSC)
- LCD Monitor Inverters
Out of Stock
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.2833 | $ 0.28 |
| 200+ | $ 0.1131 | $ 22.62 |
| 500+ | $ 0.1093 | $ 54.65 |
| 1,000+ | $ 0.1074 | $ 107.40 |
Standard Packaging4000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | SOP-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 183pF | |
| Current - Continuous Drain(Id) | 11A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 1.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 153pF | |
| RDS(on) | 18mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | 13.5nC@4.5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | SOP-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 183pF | |
| Current - Continuous Drain(Id) | 11A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 1.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 153pF | |
| RDS(on) | 18mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | 13.5nC@4.5V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
This N-channel MOSFET employs advanced trench technology and design to deliver excellent on-resistance RDS(on) with low gate charge, making it suitable for a wide range of applications.
Features
AI Translation
- Drain-source voltage VDS = 30 V, drain current ID = 11 A, on-resistance RDS(ON) < 10 mΩ at gate-source voltage VGS = 10 V
- Low gate charge
- RoHS-compliant devices available
- Advanced high cell density trench technology for ultra-low on-resistance RDS(ON)
- Excellent package thermal dissipation
Applications
AI Translation
- Power Management
- Portable Devices
- DC/DC Converters
- Load Switches
- Digital Still Cameras (DSC)
- LCD Monitor Inverters
C18190897 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| AO4406-JSM | JSMSEMI | SOP-8 | 0 | $ 0.2833 | ||
| AO4420-JSM | JSMSEMI | SOP-8 | 0 | $ 0.2833 | ||
| CEM3252-JSM | JSMSEMI | SOP-8 | 0 | $ 0.2833 | ||
| P1203BV-JSM | JSMSEMI | SOP-8 | 0 | $ 0.2833 | ||
| AO4418-JSM | JSMSEMI | SOP-8 | 0 | $ 0.2833 | ||
| APM4412KC-JSM | JSMSEMI | SOP-8 | 0 | $ 0.2833 | ||
| IRF7807ATR-JSM | JSMSEMI | SOP-8 | 0 | $ 0.2833 | ||
| IRF7811WTR-JSM | JSMSEMI | SOP-8 | 0 | $ 0.2833 | ||
| RRS130N03-JSM | JSMSEMI | SOP-8 | 0 | $ 0.2833 | ||
| SI4410BDY-JSM | JSMSEMI | SOP-8 | 0 | $ 0.2833 |