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Infineon IRL540NPBFRoHS

製造商
Infineon
製造商料號
IRL540NPBF
LCSC 編號
C111607
包裝
TO-220AB
客戶編號
關鍵特性
MOSFET N-CH 100V 36A TO-220AB
數據手冊pdf iconInfineon IRL540NPBF
現貨: 2,109
2,109 現貨，極速出貨
最小值: 1倍數: 1銷售單位: Piece
添加到BOM清單
數量單價總金額
1+$ 1.0338$ 1.03
10+$ 0.868$ 8.68
50+$ 0.777$ 38.85
100+$ 0.673$ 67.30
500+$ 0.6274$ 313.70
1,000+$ 0.6063$ 606.30
標準封裝50/Full Tube
數量更多價格更優？
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產品規格

全選
類型描述
類別Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
製造商Infineon
包裝TO-220AB
Output Capacitance(Coss)350pF
Pd - Power Dissipation140W
Configuration-
Operating Temperature-55℃~+175℃
Drain to Source Voltage100V
Current - Continuous Drain(Id)36A
Gate Threshold Voltage (Vgs(th))2V
Reverse Transfer Capacitance (Crss@Vds)170pF
RDS(on)63mΩ@4V
Number1 N-channel
Input Capacitance(Ciss)1.8nF
Gate Charge(Qg)74nC
Vgs±16V
TypeN-Channel
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概述

AI 翻譯

Fifth Generation HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

特性

AI 翻譯
  • Lead-Free
  • Logic-Level Gate Drive
  • Advanced Process Technology
  • Dynamic dv/dt Rating
  • 175°C Operating Temperature
  • Fast Switching
  • Fully Avalanche Rated