Infineon SPP11N60C3XKSA1
| Manufacturer | |
| MPN | SPP11N60C3XKSA1 |
| LCSC Part # | C672222 |
| Packaging | TO-220-3 |
| Customer # | |
| Key Attributes | MOSFET N-CH 650V 11A TO-220-3 |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-220-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 11A | |
| Gate Threshold Voltage (Vgs(th)) | 3.9V | |
| Pd - Power Dissipation | 125W | |
| RDS(on) | 380mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.2nF | |
| Gate Charge(Qg) | 60nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-220-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 11A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3.9V | |
| Pd - Power Dissipation | 125W | |
| RDS(on) | 380mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.2nF | |
| Gate Charge(Qg) | 60nC@10V |
Report an ErrorShow similar products (0) >
Features
AI Translation
- New revolutionary high voltage technology
- Fully isolated package (2500 VAC)
- Pb-free lead plating; RoHS compliant
- Qualified according to J E D E C for target applications
- Identical low-side and high-side switch
In-Stock: 100
100 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 2.8109 | $ 2.81 |
| 10+ | $ 2.4886 | $ 24.89 |
| 50+ | $ 2.2852 | $ 114.26 |
| 100+ | $ 2.0785 | $ 207.85 |
| 500+ | $ 1.9841 | $ 992.05 |
| 1,000+ | $ 1.9434 | $ 1943.40 |
Standard Packaging50/Full Tube | ||
Better price for more quantity?
$
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-220-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 11A | |
| Gate Threshold Voltage (Vgs(th)) | 3.9V | |
| Pd - Power Dissipation | 125W | |
| RDS(on) | 380mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.2nF | |
| Gate Charge(Qg) | 60nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-220-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 11A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3.9V | |
| Pd - Power Dissipation | 125W | |
| RDS(on) | 380mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.2nF | |
| Gate Charge(Qg) | 60nC@10V |
Report an ErrorShow similar products (0) >
Features
AI Translation
- New revolutionary high voltage technology
- Fully isolated package (2500 VAC)
- Pb-free lead plating; RoHS compliant
- Qualified according to J E D E C for target applications
- Identical low-side and high-side switch
C672222 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



