NCE NCE65TF099T
| Fabricante | NCEAsian Brands |
| N.º de pieza fab. | NCE65TF099T |
| Nº LCSC | C502878 |
| Emb. | TO-247 |
| Número de Cliente | |
| Atrib. clave | MOSFET N-CH 650V 38A TO-247 |
| Hoja de Datos |
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | NCE | |
| Emb. | TO-247 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 38A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Pd - Power Dissipation | 322W | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.5pF | |
| RDS(on) | 89mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.2nF | |
| Gate Charge(Qg) | 55nC@10V |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | NCE | |
| Emb. | TO-247 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 38A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Tipo | Descripción | |
|---|---|---|
| Pd - Power Dissipation | 322W | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.5pF | |
| RDS(on) | 89mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.2nF | |
| Gate Charge(Qg) | 55nC@10V |
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Descripción
Traducción por IA
The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.
Características
Traducción por IA
- Optimized body diode reverse recovery performance
- Low on-resistance and low conduction losses
- Small package
- Ultra Low Gate Charge cause lower driving requirements
- 100% Avalanche Tested
- ROHS compliant
Aplicaciones
Traducción por IA
- Power factor correction(PFC)
- Switched mode power supplies(SMPS)
- Uninterruptible Power Supply(UPS)
- LLC Half-bridge
En stock: 330
330 En stock, envío inmediato
Mínimo: 1Múltiplo: 1Unidad de venta: Piece
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| Cant. | Prec. unit. | Importo total |
|---|---|---|
| 1+ | $ 3.2087 | $ 3.21 |
| 10+ | $ 2.6742 | $ 26.74 |
| 30+ | $ 2.3395 | $ 70.19 |
| 90+ | $ 1.9967 | $ 179.70 |
| 510+ | $ 1.8424 | $ 939.62 |
| 1,200+ | $ 1.7741 | $ 2128.92 |
Encapsulado Estándar30/Full Tube | ||
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Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | NCE | |
| Emb. | TO-247 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 38A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Pd - Power Dissipation | 322W | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.5pF | |
| RDS(on) | 89mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.2nF | |
| Gate Charge(Qg) | 55nC@10V |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | NCE | |
| Emb. | TO-247 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 38A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Tipo | Descripción | |
|---|---|---|
| Pd - Power Dissipation | 322W | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.5pF | |
| RDS(on) | 89mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.2nF | |
| Gate Charge(Qg) | 55nC@10V |
Reportar un errorMostrar productos similares (0) >
Descripción
Traducción por IA
The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.
Características
Traducción por IA
- Optimized body diode reverse recovery performance
- Low on-resistance and low conduction losses
- Small package
- Ultra Low Gate Charge cause lower driving requirements
- 100% Avalanche Tested
- ROHS compliant
Aplicaciones
Traducción por IA
- Power factor correction(PFC)
- Switched mode power supplies(SMPS)
- Uninterruptible Power Supply(UPS)
- LLC Half-bridge
C502878 Biblioteca EasyEDA
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Detalles |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
