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onsemi MUN5134DW1T1G
| Manufacturer | |
| MPN | MUN5134DW1T1G |
| LCSC Part # | C891817 |
| Packaging | SOT-363 |
| Customer # | |
| Key Attributes | 80 250mW 100mA 50V 2 PNP Pre-Biased Transistors SOT-363 Bipolar Transistor Arrays, Pre-Biased RoHS |
| Datasheet |  onsemi MUN5134DW1T1G |
| Alternative Parts | 1 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Manufacturer | onsemi | |
| Packaging | SOT-363 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 80 | |
| Operating Temperature | - | |
| Vce Saturation(VCE(sat)) | 250mV@10mA,1mA | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | - | |
| Resistor Ratio | - | |
| Pd - Power Dissipation | 250mW | |
| Voltage - Input(Max)(VI(off)) | - | |
| Input Voltage (VI(on)@Ic,Vce) | - | |
| Current - Collector(Ic) | 100mA | |
| Collector - Emitter Voltage VCEO | 50V | |
| type | PNP | |
| Number | 2 PNP Pre-Biased Transistors |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Manufacturer | onsemi | |
| Packaging | SOT-363 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 80 | |
| Operating Temperature | - | |
| Vce Saturation(VCE(sat)) | 250mV@10mA,1mA | |
| Output Voltage(VO(on)) | - |
| Type | Description | |
|---|---|---|
| Input Resistor | - | |
| Resistor Ratio | - | |
| Pd - Power Dissipation | 250mW | |
| Voltage - Input(Max)(VI(off)) | - | |
| Input Voltage (VI(on)@Ic,Vce) | - | |
| Current - Collector(Ic) | 100mA | |
| Collector - Emitter Voltage VCEO | 50V | |
| type | PNP | |
| Number | 2 PNP Pre-Biased Transistors |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
This series of digital transistors is designed to replace discrete devices and their external resistor bias networks. The Bias Resistor Transistor (BRT) integrates a single transistor with a monolithic bias network consisting of two resistors — a series base resistor and a base-emitter resistor. BRTs eliminate the need for these discrete components by integrating them into a single device. Using BRTs reduces system cost and saves board space.
Features
AI Translation
- S and NSV prefixes for automotive and other applications requiring unique place of origin and controlled change requirements; AEC-Q101 compliant with PPAP capability
- Simplified circuit design
- Board space savings
- Reduced component count
- Lead-free, halogen-free/BFR-free, and RoHS compliant
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.042 | $ 0.04 |
| 200+ | $ 0.0163 | $ 3.26 |
| 500+ | $ 0.0157 | $ 7.85 |
| 1,000+ | $ 0.0154 | $ 15.40 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Manufacturer | onsemi | |
| Packaging | SOT-363 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 80 | |
| Operating Temperature | - | |
| Vce Saturation(VCE(sat)) | 250mV@10mA,1mA | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | - | |
| Resistor Ratio | - | |
| Pd - Power Dissipation | 250mW | |
| Voltage - Input(Max)(VI(off)) | - | |
| Input Voltage (VI(on)@Ic,Vce) | - | |
| Current - Collector(Ic) | 100mA | |
| Collector - Emitter Voltage VCEO | 50V | |
| type | PNP | |
| Number | 2 PNP Pre-Biased Transistors |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Manufacturer | onsemi | |
| Packaging | SOT-363 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 80 | |
| Operating Temperature | - | |
| Vce Saturation(VCE(sat)) | 250mV@10mA,1mA | |
| Output Voltage(VO(on)) | - |
| Type | Description | |
|---|---|---|
| Input Resistor | - | |
| Resistor Ratio | - | |
| Pd - Power Dissipation | 250mW | |
| Voltage - Input(Max)(VI(off)) | - | |
| Input Voltage (VI(on)@Ic,Vce) | - | |
| Current - Collector(Ic) | 100mA | |
| Collector - Emitter Voltage VCEO | 50V | |
| type | PNP | |
| Number | 2 PNP Pre-Biased Transistors |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
This series of digital transistors is designed to replace discrete devices and their external resistor bias networks. The Bias Resistor Transistor (BRT) integrates a single transistor with a monolithic bias network consisting of two resistors — a series base resistor and a base-emitter resistor. BRTs eliminate the need for these discrete components by integrating them into a single device. Using BRTs reduces system cost and saves board space.
Features
AI Translation
- S and NSV prefixes for automotive and other applications requiring unique place of origin and controlled change requirements; AEC-Q101 compliant with PPAP capability
- Simplified circuit design
- Board space savings
- Reduced component count
- Lead-free, halogen-free/BFR-free, and RoHS compliant
C891817 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Type | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| MUN5133DW1T1G | onsemi | SOT-363 | 145 | $0.0243 $0.1617 |