Zdjęcia poglądowe
Modele EDAEasyEDA
onsemi FDMA008P20LZ
| Producent | |
| Nr części prod. | FDMA008P20LZ |
| Nr LCSC | C890887 |
| Opak. | PQFN-6(2x2) |
| Numer Klienta | |
| Klucz. cechy | 20V 12A 1.4V 2.4W 13mΩ@4.5V 1 P-Channel PQFN-6(2x2) Single FETs, MOSFETs RoHS |
| Karta Katalogowa |  onsemi FDMA008P20LZ |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | onsemi | |
| Opak. | PQFN-6(2x2) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 12A | |
| Gate Threshold Voltage (Vgs(th)) | 1.4V | |
| Pd - Power Dissipation | 2.4W | |
| RDS(on) | 13mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 4.383nF | |
| Gate Charge(Qg) | 39nC@4.5V |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | onsemi | |
| Opak. | PQFN-6(2x2) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 12A |
| Typ | Opis | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.4V | |
| Pd - Power Dissipation | 2.4W | |
| RDS(on) | 13mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 4.383nF | |
| Gate Charge(Qg) | 39nC@4.5V |
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Opis
Tłumaczenie AI
This device is designed for battery charging or load switching in cellular phones and other ultra-portable applications. It features MOSFETs with low on-resistance and incorporates Zener diodes for ESD protection. The WDFN6 (MicroFET 2.05 × 2.05) package delivers excellent thermal performance for its physical footprint, making it ideal for linear-mode applications.
Funkcje
Tłumaczenie AI
- Maximum rDS(on) = 13 mΩ at VGS = -4.5 V, ID = -2.5 A
- Maximum rDS(on) = 16 mΩ at VGS = -2.5 V, ID = -1.4 A
- Maximum rDS(on) = 20 mΩ at VGS = -1.8 V, ID = -1.0 A
- Maximum rDS(on) = 30 mΩ at VGS = -1.5 V, ID = -0.85 A
- Ultra-thin WDFN6 (MicroFET 2.05 × 2.05 mm) package with maximum thickness of only 0.8 mm
- Typical HBM ESD protection rating >1 kV
- Halogen-free and antimony-free
- RoHS compliant
Zastosowania
Tłumaczenie AI
- Cellular phones
- Other ultra-portable applications
- Linear mode applications
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| Szt. | Cena jedn.(Tylko do wglądu) | Suma całkowita |
|---|---|---|
| 1+ | $ 0.2293 | $ 0.23 |
| 10+ | $ 0.1813 | $ 1.81 |
| 30+ | $ 0.1607 | $ 4.82 |
| 100+ | $ 0.1351 | $ 13.51 |
| 500+ | $ 0.1236 | $ 61.80 |
| 1,000+ | $ 0.1168 | $ 116.80 |
Standardowa Obudowa3000/Full Reel | ||
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | onsemi | |
| Opak. | PQFN-6(2x2) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 12A | |
| Gate Threshold Voltage (Vgs(th)) | 1.4V | |
| Pd - Power Dissipation | 2.4W | |
| RDS(on) | 13mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 4.383nF | |
| Gate Charge(Qg) | 39nC@4.5V |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | onsemi | |
| Opak. | PQFN-6(2x2) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 12A |
| Typ | Opis | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.4V | |
| Pd - Power Dissipation | 2.4W | |
| RDS(on) | 13mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 4.383nF | |
| Gate Charge(Qg) | 39nC@4.5V |
Zgłoś błądPokaż podobne produkty (0) >
Opis
Tłumaczenie AI
This device is designed for battery charging or load switching in cellular phones and other ultra-portable applications. It features MOSFETs with low on-resistance and incorporates Zener diodes for ESD protection. The WDFN6 (MicroFET 2.05 × 2.05) package delivers excellent thermal performance for its physical footprint, making it ideal for linear-mode applications.
Funkcje
Tłumaczenie AI
- Maximum rDS(on) = 13 mΩ at VGS = -4.5 V, ID = -2.5 A
- Maximum rDS(on) = 16 mΩ at VGS = -2.5 V, ID = -1.4 A
- Maximum rDS(on) = 20 mΩ at VGS = -1.8 V, ID = -1.0 A
- Maximum rDS(on) = 30 mΩ at VGS = -1.5 V, ID = -0.85 A
- Ultra-thin WDFN6 (MicroFET 2.05 × 2.05 mm) package with maximum thickness of only 0.8 mm
- Typical HBM ESD protection rating >1 kV
- Halogen-free and antimony-free
- RoHS compliant
Zastosowania
Tłumaczenie AI
- Cellular phones
- Other ultra-portable applications
- Linear mode applications
C890887 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |