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MICROCHIP SST25VF080B-50-4I-S2AF product image
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MICROCHIP SST25VF080B-50-4I-S2AF

Manufacturer
MPN
SST25VF080B-50-4I-S2AF
LCSC Part #
C80925
Packaging
SOIC-8-208mil
Customer #
Key Attributes
8 Mbit SPI Serial Flash
Datasheetpdf iconMICROCHIP SST25VF080B-50-4I-S2AF
RoHS Compliance1 documents available
Alternative Parts10
In-Stock: 63
63 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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QtyUnit PriceTotal Amount
1+$ 3.5743$ 3.57
10+$ 3.0894$ 30.89
30+$ 2.802$ 84.06
100+$ 2.5113$ 251.13
500+$ 2.3774$ 1188.70
1,000+$ 2.317$ 2317.00
Standard Packaging90/Full Tube
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Products Specifications

All
TypeDescription
CategoryIntegrated Circuits (ICs)/Memory/Memory
ManufacturerMICROCHIP
PackagingSOIC-8-208mil
Operating Temperature-40℃~+85℃
FeaturesWrite enable latch;Software write protection
Memory Size8Mbit
Voltage - Supply2.7V~3.6V
Program / Erase Cycles100,000 cycles
Clock Frequency50MHz
Data Retention - TDR (Year)100 Years
Block Erase Time(tBE)18ms@(32KB)
Write Cycle Time(tWC)-
Page Programming Time (Tpp)-
Standby Supply Current5uA
InterfaceSPI

Introduction

AI Translation

25 series Serial Flash family features a four-wire, SPI-compatible interface that allows for a low pin-count package which occupies less board space and ultimately lowers total system costs. The SST25VF080B devices are enhanced with improved operating frequency and lower power consumption. SST25VF080B SPI serial flash memories are manufactured with proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST25VF080B devices significantly improve performance and reliability, while lowering power consumption. The devices write (Program or Erase) with a single power supply of 2.7 - 3.6V for SST25VF080B. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash memory technologies.

Features

AI Translation
  • Single Voltage Read and Write Operations - 2.7 - 3.6V
  • Serial Interface Architecture - SPI Compatible: Mode 0 and Mode 3
  • High Speed Clock Frequency - 50/66 MHz conditional
  • Superior Reliability - Endurance: 100,000 Cycles (typical) - Greater than 100 years Data Retention
  • Low Power Consumption: - Active Read Current: 10 mA (typical) - Standby Current: 5 μA (typical)
  • Flexible Erase Capability - Uniform 4 KByte sectors - Uniform 32 KByte overlay blocks - Uniform 64 KByte overlay blocks
  • Fast Erase and Byte-Program: - Chip-Erase Time: 35 ms (typical) - Sector-/Block-Erase Time: 18 ms (typical) - Byte-Program Time: 7 μs (typical)
  • Auto Address Increment (AAI) Programming - Decrease total chip programming time over Byte-Program operations
  • End-of-Write Detection - Software polling the BUSY bit in Status Register - Busy Status readout on SO pin in AAI Mode
  • Hold Pin (HOLD#) - Suspends a serial sequence to the memory without deselecting the device
  • Write Protection (WP#) - Enables/Disables the Lock-Down function of the status register
  • Software Write Protection - Write protection through Block-Protection bits in status register
  • Temperature Range - Commercial: 0℃ to +70℃ - Industrial: -40℃ to +85℃

Alternative Parts

MPNManufacturerPackagingAvailabilityUnit Price
SST25VF080B-50-4I-S2AF-TMICROCHIPSOIC-8-208mil23$ 2.2992
SST25VF080B-50-4I-S2AEMICROCHIPSOIC-8-208mil68$ 2.8678
BY25D80ASSIG(T)BOYAMICROSOP-8-208mil860$ 0.2669
SST25VF080B-50-4I-S2AE-TMICROCHIPSOIC-8-208mil0$ 2.852
SST25VF080B-50-4C-S2AFMICROCHIPSOIC-8-208mil0$ 3.0831
SST25VF080B-50-4C-S2AF-TMICROCHIPSOIC-8-208mil0$ 1.8896
MX25R8035FM2IL0TRMXICSOP-8-200mil0$ 0.8101
MX25R8035FM2IH1MXICSOIC-8-208mil0$ 0.8139
BY25D80ASSIG(R)BOYAMICROSOIC-8-208mil0$ 0.3934
BY25Q80BSSIG(T)BOYAMICROSOP-8-208mil0$ 0.2336