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Infineon IRFL024ZTRPBF
| Manufacturer | |
| MPN | IRFL024ZTRPBF |
| LCSC Part # | C80625 |
| Packaging | SOT-223 |
| Customer # | |
| Key Attributes | MOSFET N-CH 55V 5.1A SOT-223 |
| Datasheet |  Infineon IRFL024ZTRPBF |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | SOT-223 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 55V | |
| Current - Continuous Drain(Id) | 5.1A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 2.8W | |
| Reverse Transfer Capacitance (Crss@Vds) | 39pF | |
| RDS(on) | 57.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 340pF | |
| Gate Charge(Qg) | 14nC |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | SOT-223 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 55V | |
| Current - Continuous Drain(Id) | 5.1A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 2.8W | |
| Reverse Transfer Capacitance (Crss@Vds) | 39pF | |
| RDS(on) | 57.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 340pF | |
| Gate Charge(Qg) | 14nC |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design area 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Features
AI Translation
- Advanced Process Technology
- Ultra Low On-Resistance
- 150°C Operating Temperature
- Fast Switching
- Repetitive Avalanche Allowed up to Tjmax
- Lead-Free
In-Stock: 7,982
7,982 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.6205 | $ 0.62 |
| 10+ | $ 0.5062 | $ 5.06 |
| 30+ | $ 0.4589 | $ 13.77 |
| 100+ | $ 0.3985 | $ 39.85 |
| 500+ | $ 0.2972 | $ 148.60 |
| 1,000+ | $ 0.2809 | $ 280.90 |
Standard Packaging2500/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | SOT-223 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 55V | |
| Current - Continuous Drain(Id) | 5.1A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 2.8W | |
| Reverse Transfer Capacitance (Crss@Vds) | 39pF | |
| RDS(on) | 57.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 340pF | |
| Gate Charge(Qg) | 14nC |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | SOT-223 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 55V | |
| Current - Continuous Drain(Id) | 5.1A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 2.8W | |
| Reverse Transfer Capacitance (Crss@Vds) | 39pF | |
| RDS(on) | 57.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 340pF | |
| Gate Charge(Qg) | 14nC |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design area 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Features
AI Translation
- Advanced Process Technology
- Ultra Low On-Resistance
- 150°C Operating Temperature
- Fast Switching
- Repetitive Avalanche Allowed up to Tjmax
- Lead-Free
C80625 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| NTF3055L108T1G | TECH PUBLIC | SOT-223 | 5,530 | $ 0.2833 | ||
| IRFL024ZTR(UMW) | UMW | SOT-223 | 1,280 | $ 0.1302 | ||
| IPN60R600P7S | Infineon | SOT-223 | 31 | $ 0.6178 | ||
| DOT6N06 | DOINGTER | SOT-223 | 1,380 | $ 0.0805 | ||
| IRLL024ZTRPBF | Infineon | SOT-223 | 0 | $ 0.7734 | ||
| BUK78150-55A/CUX | Nexperia | SOT-223 | 0 | $ 0.1373 | ||
| BUK78150-55A/CUF | Nexperia | SOT-223-3 | 0 | $ 0.4106 | ||
| IPN50R650CE | Infineon | SOT-223-3 | 0 | $ 0.6675 | ||
| IPN60R360P7S | Infineon | SOT-223-3 | 0 | $ 0.8601 | ||
| S-LN03N060TZHG | LRC | SOT-223-3 | 0 | $ 0.4629 |