Tak Cheong DTC123JE
| Produttore | Tak CheongAsian Brands |
| Cod. Prod. | DTC123JE |
| Cod. LCSC | C706604 |
| Imballo | SOT-523 |
| Numero Cliente | |
| Attr. chiave | TRANS PREBIAS NPN 50V SOT-523 |
| Scheda Tecnica |
Specifiche del Prodotto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Produttore | Tak Cheong | |
| Imballo | SOT-523 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 250MHz | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 80 | |
| Vce Saturation(VCE(sat)) | 300mV | |
| Current - Collector(Ic) | 100mA | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | 2.2kΩ | |
| Resistor Ratio | 2.2 | |
| Pd - Power Dissipation | 150mW | |
| Input Voltage (VI(on)@Ic,Vce) | - | |
| Voltage - Input(Max)(VI(off)) | - | |
| Operating temperature | -50℃~+150℃ | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Produttore | Tak Cheong | |
| Imballo | SOT-523 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 250MHz | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 80 | |
| Vce Saturation(VCE(sat)) | 300mV | |
| Current - Collector(Ic) | 100mA |
| Tipo | Descrizione | |
|---|---|---|
| Output Voltage(VO(on)) | - | |
| Input Resistor | 2.2kΩ | |
| Resistor Ratio | 2.2 | |
| Pd - Power Dissipation | 150mW | |
| Input Voltage (VI(on)@Ic,Vce) | - | |
| Voltage - Input(Max)(VI(off)) | - | |
| Operating temperature | -50℃~+150℃ | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
Descrizione
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors: a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The device is designed for low power surface mount applications.
Caratteristiche
- Simplifies Circuit Design
- Reduces Board Space
- Reduces Component Count
- RoHS Compliant
- Green EMC
- Matte Tin(Sn) Lead Finish
- Weight: approx. 0.002g
| Qtà | Pr. unit. | Importo totale |
|---|---|---|
| 50+ | $ 0.0255 | $ 1.28 |
| 500+ | $ 0.0212 | $ 10.60 |
| 3,000+ | $ 0.0188 | $ 56.40 |
| 6,000+ | $ 0.0173 | $ 103.80 |
| 24,000+ | $ 0.0161 | $ 386.40 |
| 51,000+ | $ 0.0154 | $ 785.40 |
Package Standard3000/Full Reel | ||
Specifiche del Prodotto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Produttore | Tak Cheong | |
| Imballo | SOT-523 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 250MHz | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 80 | |
| Vce Saturation(VCE(sat)) | 300mV | |
| Current - Collector(Ic) | 100mA | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | 2.2kΩ | |
| Resistor Ratio | 2.2 | |
| Pd - Power Dissipation | 150mW | |
| Input Voltage (VI(on)@Ic,Vce) | - | |
| Voltage - Input(Max)(VI(off)) | - | |
| Operating temperature | -50℃~+150℃ | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Produttore | Tak Cheong | |
| Imballo | SOT-523 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 250MHz | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 80 | |
| Vce Saturation(VCE(sat)) | 300mV | |
| Current - Collector(Ic) | 100mA |
| Tipo | Descrizione | |
|---|---|---|
| Output Voltage(VO(on)) | - | |
| Input Resistor | 2.2kΩ | |
| Resistor Ratio | 2.2 | |
| Pd - Power Dissipation | 150mW | |
| Input Voltage (VI(on)@Ic,Vce) | - | |
| Voltage - Input(Max)(VI(off)) | - | |
| Operating temperature | -50℃~+150℃ | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
Descrizione
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors: a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The device is designed for low power surface mount applications.
Caratteristiche
- Simplifies Circuit Design
- Reduces Board Space
- Reduces Component Count
- RoHS Compliant
- Green EMC
- Matte Tin(Sn) Lead Finish
- Weight: approx. 0.002g
C706604 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Tipo | Dettagli |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |



