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MDD(Microdiode Semiconductor) MDDG10R02L product image
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MDD(Microdiode Semiconductor) MDDG10R02L

Manufacturer
MDD(Microdiode Semiconductor)Asian Brands
MPN
MDDG10R02L
LCSC Part #
C54525242
Packaging
TOLL-8
Customer #
Key Attributes
100V 224A 208W 2mΩ@10V 1 N-channel N-Channel TOLL-8 Single FETs, MOSFETs
DatasheetMDD(Microdiode Semiconductor) MDDG10R02L
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerMDD(Microdiode Semiconductor)
PackagingTOLL-8
Drain to Source Voltage100V
Current - Continuous Drain(Id)224A
Output Capacitance(Coss)2.501nF
Ciss-Input Capacitance7.448nF
Pd - Power Dissipation208W
Reverse Transfer Capacitance (Crss)55pF
RDS(on)2mΩ@10V
Number1 N-channel
Gate Charge(Qg)104nC
Vgs±20V
Gate Threshold Voltage (Vgs(th))3V
TypeN-Channel
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Introduction

AI Translation

This N-channel medium-voltage MOSFET employs MDD Semiconductor's advanced power trench process incorporating shield gate technology. The process is optimized to minimize on-resistance while maintaining superior switching performance and best-in-class soft body diode characteristics.

Features

AI Translation
  • Maximum R<sub>DS(on)</sub> = 2.4 mΩ at V<sub>GS</sub> = 10 V, I<sub>D</sub> = 50 A
  • Ultra-low reverse recovery charge Q<sub>rr</sub>
  • 100% UIS tested
  • 100% dV<sub>DS</sub> tested

Applications

AI Translation
  • PWM applications
  • Motor drives and uninterruptible power supplies
  • Micro solar inverters
  • Battery management systems