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Infineon AUIRF7675M2TRRoHS

Manufacturer
Infineon
MPN
AUIRF7675M2TR
LCSC Part #
C533288
Packaging
DirectFET
Customer #
Key Attributes
MOSFET N-CH 150V 18A DirectFET
Datasheetpdf iconInfineon AUIRF7675M2TR
In-Stock: 7
7 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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QtyUnit PriceTotal Amount
1+$ 3.6263$ 2.1396$ 2.14
10+$ 3.5473$ 2.0930$ 20.93
30+$ 3.4946$ 2.0619$ 61.86
100+$ 3.442$ 2.0308$ 203.08
Standard Packaging4800/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingDirectFET
Operating Temperature-55℃~+175℃
Drain to Source Voltage150V
Current - Continuous Drain(Id)18A
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation45W
Reverse Transfer Capacitance (Crss@Vds)41pF
RDS(on)47mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.36nF
Gate Charge(Qg)21nC@75V
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Introduction

AI Translation

AUIRF7675M2TR/TR1 combines the latest automotive HEXFET power MOSFET silicon technology with the advanced DirectFET package platform, delivering a best-in-class solution for automotive Class D audio amplifier applications. When following the manufacturing methods and process guidelines outlined in Application Note AN-1035, the DirectFET package is compatible with existing layout geometries, PCB assembly equipment, and vapor phase, infrared, or convection soldering techniques used in power applications. The DirectFET package supports dual-side cooling, maximizing thermal transfer efficiency in automotive power systems.

This HEXFET power MOSFET is optimized for gate charge, body diode reverse recovery, and internal gate resistance to improve key performance metrics in Class D audio amplifiers, such as efficiency, total harmonic distortion (THD), and EMI. Furthermore, compared to conventional wire-bond SOIC packages, the DirectFET package platform offers lower parasitic inductance and resistance, improving EMI performance by reducing voltage ringing associated with current transients.

These characteristics make this MOSFET a highly attractive component for automotive Class D audio amplifier systems.

Features

AI Translation
  • Optimized for Class-D audio amplifier applications
  • Low on-resistance RDS(ON) for improved efficiency
  • Low gate charge Qg for improved THD and efficiency
  • Low reverse recovery charge Qrr for improved THD and reduced EMI
  • Low parasitic inductance for reduced ringing and EMI
  • Heatsink-free operation, up to 250W per channel into 4Ω load
  • Dual-side cooling
  • Operating temperature up to 175°C
  • Repetitive avalanche capability for robustness and reliability
  • Lead-free, RoHS compliant, and halogen-free
  • Automotive-qualified

Applications

AI Translation
  • Automotive Class-D audio amplifier applications