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Infineon IRF820PBF
| Manufacturer | |
| MPN | IRF820PBF |
| LCSC Part # | C2603 |
| Packaging | TO-220 |
| Customer # | |
| Key Attributes | N-Channel MOSFET, Current:1.6A, Voltage:500V |
| Datasheet |  Infineon IRF820PBF |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-220 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 500V | |
| Output Capacitance(Coss) | 92pF | |
| Current - Continuous Drain(Id) | 2.5A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 50W | |
| Reverse Transfer Capacitance (Crss@Vds) | 37pF | |
| RDS(on) | 3Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 360pF | |
| Gate Charge(Qg) | 24nC | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-220 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 500V | |
| Output Capacitance(Coss) | 92pF | |
| Current - Continuous Drain(Id) | 2.5A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 50W | |
| Reverse Transfer Capacitance (Crss@Vds) | 37pF | |
| RDS(on) | 3Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 360pF | |
| Gate Charge(Qg) | 24nC | |
| Type | N-Channel |
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Introduction
AI Translation
The third-generation power MOSFETs provide designers with the optimal combination of fast switching, robust device design, low on-resistance, and high cost-effectiveness. The TO-220AB package is widely favored in commercial-industrial applications at power dissipation levels of approximately 50 W. Its low thermal resistance and low package cost have made the TO-220AB widely recognized throughout the industry.
Features
AI Translation
- Dynamic dV/dt rated
- Repetitive avalanche rated
- Fast switching
- Easy paralleling
- Simple drive requirement
- RoHS compliant (directive 2002/95/EC)
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 1.16 | $ 1.16 |
| 10+ | $ 1.1162 | $ 11.16 |
| 50+ | $ 1.0853 | $ 54.27 |
| 100+ | $ 1.0561 | $ 105.61 |
Standard Packaging50/Full Tube | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-220 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 500V | |
| Output Capacitance(Coss) | 92pF | |
| Current - Continuous Drain(Id) | 2.5A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 50W | |
| Reverse Transfer Capacitance (Crss@Vds) | 37pF | |
| RDS(on) | 3Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 360pF | |
| Gate Charge(Qg) | 24nC | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-220 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 500V | |
| Output Capacitance(Coss) | 92pF | |
| Current - Continuous Drain(Id) | 2.5A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 50W | |
| Reverse Transfer Capacitance (Crss@Vds) | 37pF | |
| RDS(on) | 3Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 360pF | |
| Gate Charge(Qg) | 24nC | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
The third-generation power MOSFETs provide designers with the optimal combination of fast switching, robust device design, low on-resistance, and high cost-effectiveness. The TO-220AB package is widely favored in commercial-industrial applications at power dissipation levels of approximately 50 W. Its low thermal resistance and low package cost have made the TO-220AB widely recognized throughout the industry.
Features
AI Translation
- Dynamic dV/dt rated
- Repetitive avalanche rated
- Fast switching
- Easy paralleling
- Simple drive requirement
- RoHS compliant (directive 2002/95/EC)
C2603 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| IRF820APBF | VISHAY | TO-220AB | 3 | $ 1.0282 | ||
| WGP7N60SE | Wild Goose | TO-220 | 990 | $ 0.2624 | ||
| WGP7N65SE | Wild Goose | TO-220 | 125 | $ 0.2762 | ||
| WGP8N60SE | Wild Goose | TO-220 | 415 | $ 0.3 | ||
| WGP8N65SE | Wild Goose | TO-220 | 930 | $ 0.3157 | ||
| NPS8N50C | NH | TO-220C | 45 | $ 0.344 | ||
| IRF820 | TI | TO-220AB | 0 | $ 0.608 | ||
| IRF820 | onsemi | TO-220AB | 0 | $ 0.608 | ||
| IRF820APBF-BE3 | VISHAY | TO-220AB | 0 | $ 1.0215 | ||
| SPP04N60S5 | Infineon | TO-220 | 0 | $ 0.6743 |