Infineon CY15V116QSN-108BKXQT

The EXCELON™ Ultra CY15x116QSN is a high-performance 16 Mb nonvolatile memory using advanced ferroelectric process technology. Ferroelectric RAM (F-RAM) is nonvolatile and performs read and write operations similarly to RAM. It reliably retains data for 151 years while eliminating the complexity, overhead, and system-level reliability concerns associated with serial flash and other nonvolatile memories.

Unlike serial flash, the CY15x116QSN performs write operations at bus speed with no write delay. Once each byte is successfully transferred to the device, data is immediately written to the memory array, and the next bus cycle can begin without data polling. In addition, the device offers exceptional write endurance compared to other nonvolatile memories. The CY15x116QSN supports 10¹⁴ read/write cycles — 100 million times more write cycles than EEPROM. These characteristics make the CY15x116QSN ideal for nonvolatile memory applications requiring frequent or fast writes, such as data logging (where write cycle count can be critical) and industrial control applications with strict requirements against data loss caused by the long write times of serial flash.

The CY15x116QSN combines 16 Mb F-RAM with a high-speed quad SPI (QPI) single data rate (SDR) and double data rate (DDR) interface, enhancing the nonvolatile write capability of F-RAM technology. The device integrates read-only device ID and unique ID features, enabling the SPI bus master to determine the manufacturer, product density, product revision, and unique ID of each unit. The device also provides a read-only unique serial number that can be used to identify a board or system.

The device supports on-chip ECC logic capable of detecting and correcting 2-bit errors per 8-byte data unit, and reporting 3-bit errors per 8-byte data unit. The CY15x116QSN also supports a cyclic redundancy check (CRC) function for verifying the integrity of data stored in the memory array.

Low-voltage operation:

• CY15V116QSN: VDD = 1.71 V to 1.89 V
• CY15B116QSN: VDD = 1.8 V to 3.6 V

Operating temperature:

• Extended industrial: -40°C to +105°C

Package:

• 24-ball Fine-pitch BGA (FBGA)

RoHS compliant.

• 16 Mb F-RAM, organized as 2048 K × 8
• Near-unlimited endurance up to 100 trillion (10¹⁴) read/write cycles
• 151-year data retention
• Infineon instant nonvolatile write technology
• Advanced high-reliability ferroelectric process
• Single I/O and multi-I/O SPI
• Serial bus interface SPI protocol
• SPI mode 0 (0, 0) and mode 3 (1, 1) for all SDR mode transfers
• SPI mode 0 (0, 0) for all DDR mode transfers
• Extended I/O SPI protocol
• Dual SPI (DPI) protocol
• Quad SPI (QPI) protocol
• SPI clock frequency
• SPI SDR up to 108 MHz
• SPI DDR up to 46 MHz
• Execute-in-Place (XIP) for memory read/write
• Write protection, data security, and data integrity
• Hardware protection via write protect (WP) pin
• Software block protection
• Embedded ECC and CRC for enhanced data integrity
• ECC detects and corrects 2-bit errors; 3-bit errors are reported via ECC status register without correction
• CRC detects any unintended changes to raw data
• Extended electronic signature
• Device ID includes manufacturer ID and product ID
• Unique ID
• User-programmable serial number
• Dedicated 256-byte special sector F-RAM
• Dedicated special sector read/write
• Content survives up to three standard reflow cycles
• Low power consumption at high speed
• Typical active current of 14 mA at 108 MHz SPI SDR
• Typical active current of 22 mA at 108 MHz QSPI SDR
• Typical active current of 16.5 mA at 46 MHz QSPI DDR
• Typical standby current of 115 μA
• Typical deep power-down mode current of 1.4 μA
• Typical hibernate mode current of 0.1 μA