MICROCHIP JANTX1N6079
| Fabricante | |
| Cód. da peça | JANTX1N6079 |
| Nº LCSC | C17498331 |
| Emb. | Through Hole |
| Número do Cliente | |
| Atrib. princ. | 30ns 50V 1.5V@37.7A 2A Through Hole Single Diodes |
| Folha de Dados |
Especificações do Produto
| Tipo | Descrição | |
|---|---|---|
| Categoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Fabricante | MICROCHIP | |
| Emb. | Through Hole | |
| Reverse Recovery Time (trr) | 30ns | |
| Diode Configuration | - | |
| Operating Junction Temperature Range | -65℃~+155℃ | |
| Voltage - DC Reverse (Vr) (Max) | 50V | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 1.5V@37.7A | |
| Reverse Leakage Current (Ir) | 10uA@50V | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Current - Rectified | 2A |
| Tipo | Descrição | |
|---|---|---|
| Categoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Fabricante | MICROCHIP | |
| Emb. | Through Hole | |
| Reverse Recovery Time (trr) | 30ns | |
| Diode Configuration | - | |
| Operating Junction Temperature Range | -65℃~+155℃ |
| Tipo | Descrição | |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 50V | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 1.5V@37.7A | |
| Reverse Leakage Current (Ir) | 10uA@50V | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Current - Rectified | 2A |
Descrição
This "Ultrafast Recovery" rectifier diode series is designed for high-reliability applications where failures cannot be tolerated. These rectifiers are rated at 3A, 6A, and 12A (TL = 70°C) with working peak inverse voltages from 50 to 150 volts, hermetically sealed in void-free glass construction using internal "first-level" metallurgical bonding. These devices are also available in surface-mount MELF package configurations by adding the "US" suffix (refer to a separate datasheet for 1N6073US through 1N6081US). Microsemi also offers a wide range of other rectifier products to meet various current ratings and recovery time requirements, including standard, fast, and ultrafast types in both through-hole and SMT packages.
Recursos
- Popular JEDEC registered 1N6073 to 1N6081 series, void-free hermetically sealed glass package
- Extremely rugged construction
- Triple passivation
- Internal "first-level" metallurgical bonding
- 1N6074 and 1N6075 available in JAN, JANTX, and JANTXV versions per MIL-PRF-19500/503
- Per MIL-PRF-19500, JAN, JANTX, JANTXV, or JANS screening available using MQ, MX, MV, or MSP prefixes respectively (e.g., MX6076, MV6079, MSP6081)
- SMT equivalents also available in square-end MELF package with "US" suffix
Aplicações
- 50 to 150V ultra-fast recovery rectifier series
- Switching power supplies or other applications requiring extremely fast switching speed and low forward loss
| Qtd. | Preço unit.(Apenas para referência) | Valor total |
|---|---|---|
| 1+ | $ 94.2596 | $ 94.26 |
| 200+ | $ 37.6109 | $ 7522.18 |
| 500+ | $ 36.3537 | $ 18176.85 |
| 1,000+ | $ 35.7327 | $ 35732.70 |
Encapsulamento Padrão1/Full Bag | ||
Especificações do Produto
| Tipo | Descrição | |
|---|---|---|
| Categoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Fabricante | MICROCHIP | |
| Emb. | Through Hole | |
| Reverse Recovery Time (trr) | 30ns | |
| Diode Configuration | - | |
| Operating Junction Temperature Range | -65℃~+155℃ | |
| Voltage - DC Reverse (Vr) (Max) | 50V | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 1.5V@37.7A | |
| Reverse Leakage Current (Ir) | 10uA@50V | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Current - Rectified | 2A |
| Tipo | Descrição | |
|---|---|---|
| Categoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Fabricante | MICROCHIP | |
| Emb. | Through Hole | |
| Reverse Recovery Time (trr) | 30ns | |
| Diode Configuration | - | |
| Operating Junction Temperature Range | -65℃~+155℃ |
| Tipo | Descrição | |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 50V | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 1.5V@37.7A | |
| Reverse Leakage Current (Ir) | 10uA@50V | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Current - Rectified | 2A |
Descrição
This "Ultrafast Recovery" rectifier diode series is designed for high-reliability applications where failures cannot be tolerated. These rectifiers are rated at 3A, 6A, and 12A (TL = 70°C) with working peak inverse voltages from 50 to 150 volts, hermetically sealed in void-free glass construction using internal "first-level" metallurgical bonding. These devices are also available in surface-mount MELF package configurations by adding the "US" suffix (refer to a separate datasheet for 1N6073US through 1N6081US). Microsemi also offers a wide range of other rectifier products to meet various current ratings and recovery time requirements, including standard, fast, and ultrafast types in both through-hole and SMT packages.
Recursos
- Popular JEDEC registered 1N6073 to 1N6081 series, void-free hermetically sealed glass package
- Extremely rugged construction
- Triple passivation
- Internal "first-level" metallurgical bonding
- 1N6074 and 1N6075 available in JAN, JANTX, and JANTXV versions per MIL-PRF-19500/503
- Per MIL-PRF-19500, JAN, JANTX, JANTXV, or JANS screening available using MQ, MX, MV, or MSP prefixes respectively (e.g., MX6076, MV6079, MSP6081)
- SMT equivalents also available in square-end MELF package with "US" suffix
Aplicações
- 50 to 150V ultra-fast recovery rectifier series
- Switching power supplies or other applications requiring extremely fast switching speed and low forward loss
Conformidade & Códigos de Exportação
| Tipo | Detalhes |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Tipo | Detalhes |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Tipo | Detalhes |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |

