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onsemi FDPF2D3N10C

Manufacturer
onsemi
MPN
FDPF2D3N10C
LCSC Part #
C899163
Packaging
TO-220F
Customer #
Key Attributes
MOSFET N-CH 100V 222A TO-220F
Datasheetonsemi FDPF2D3N10C
RoHS Compliance4 documents available
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingTO-220F
Output Capacitance(Coss)4.49nF
Ciss-Input Capacitance11.18nF
Pd - Power Dissipation45W
Configuration-
Operating Temperature-55℃~+175℃
Drain to Source Voltage100V
Current - Continuous Drain(Id)222A
Reverse Transfer Capacitance (Crss)75pF
RDS(on)2.3mΩ@10V
Number1 N-channel
Gate Charge(Qg)152nC@10V
Vgs±20V
Gate Threshold Voltage (Vgs(th))3V
TypeN-Channel
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Introduction

AI Translation

This N-Channel MV MOSFET is produced using advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.

Features

AI Translation
  • Max rDS(on)=2.3 mΩ at VGS=10 V, ID=100 A
  • Extremely Low Reverse Recovery Charge, Qrr
  • 100% UIL Tested
  • RoHS Compliant

Applications

AI Translation
  • Synchronous Rectification for ATX / Server / Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter