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onsemi FGBS3040E1-F085
| Manufacturer | |
| MPN | FGBS3040E1-F085 |
| LCSC Part # | C898628 |
| Packaging | TO-263-7 |
| Customer # | |
| Key Attributes | 150W 450V TO-263-7 Single IGBTs RoHS |
| Datasheet | onsemi FGBS3040E1-F085 |
| RoHS Compliance | 3 documents available |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | onsemi | |
| Packaging | TO-263-7 | |
| Pd - Power Dissipation | 150W | |
| Td(off) | 17us | |
| Td(on) | 13us | |
| Current - Collector(Ic) | - | |
| Collector-Emitter Breakdown Voltage (Vces) | 450V | |
| Reverse Transfer Capacitance (Cres) | - | |
| IGBT Type | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - | |
| Operating Temperature | -40℃~+175℃ | |
| Vce Saturation(VCE(sat)) | 1.8V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | - | |
| Turn-On Energy (Eon) | - | |
| Input Capacitance(Cies) | - | |
| Gate Charge(Qg) | - | |
| Output Capacitance(Coes) | 70pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | onsemi | |
| Packaging | TO-263-7 | |
| Pd - Power Dissipation | 150W | |
| Td(off) | 17us | |
| Td(on) | 13us | |
| Current - Collector(Ic) | - | |
| Collector-Emitter Breakdown Voltage (Vces) | 450V | |
| Reverse Transfer Capacitance (Cres) | - | |
| IGBT Type | - |
| Type | Description | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - | |
| Operating Temperature | -40℃~+175℃ | |
| Vce Saturation(VCE(sat)) | 1.8V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | - | |
| Turn-On Energy (Eon) | - | |
| Input Capacitance(Cies) | - | |
| Gate Charge(Qg) | - | |
| Output Capacitance(Coes) | 70pF |
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | onsemi | |
| Packaging | TO-263-7 | |
| Pd - Power Dissipation | 150W | |
| Td(off) | 17us | |
| Td(on) | 13us | |
| Current - Collector(Ic) | - | |
| Collector-Emitter Breakdown Voltage (Vces) | 450V | |
| Reverse Transfer Capacitance (Cres) | - | |
| IGBT Type | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - | |
| Operating Temperature | -40℃~+175℃ | |
| Vce Saturation(VCE(sat)) | 1.8V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | - | |
| Turn-On Energy (Eon) | - | |
| Input Capacitance(Cies) | - | |
| Gate Charge(Qg) | - | |
| Output Capacitance(Coes) | 70pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | onsemi | |
| Packaging | TO-263-7 | |
| Pd - Power Dissipation | 150W | |
| Td(off) | 17us | |
| Td(on) | 13us | |
| Current - Collector(Ic) | - | |
| Collector-Emitter Breakdown Voltage (Vces) | 450V | |
| Reverse Transfer Capacitance (Cres) | - | |
| IGBT Type | - |
| Type | Description | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - | |
| Operating Temperature | -40℃~+175℃ | |
| Vce Saturation(VCE(sat)) | 1.8V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | - | |
| Turn-On Energy (Eon) | - | |
| Input Capacitance(Cies) | - | |
| Gate Charge(Qg) | - | |
| Output Capacitance(Coes) | 70pF |
Help & FeedbackShow similar products (0) >
C898628 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Type | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |