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Modèles EDAEasyEDA
onsemi FDMA86251
| Fabricant | |
| Réf. Fab. | FDMA86251 |
| Réf. LCSC | C890907 |
| Condit. | VDFN-6(2x2) |
| Numéro Client | |
| Caract. clés | MOSFET N-CH 150V 2.4A VDFN-6(2x2) |
| Fiche Technique | onsemi FDMA86251 |
| Conformité RoHS | 4 documents disponibles |
| Pièces alternatives | 2 |
Spécifications du Produit
Tout
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | onsemi | |
| Condit. | VDFN-6(2x2) | |
| Output Capacitance(Coss) | 24pF | |
| Pd - Power Dissipation | 2.4W | |
| Configuration | - | |
| Drain to Source Voltage | 150V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 2.4A | |
| Gate Threshold Voltage (Vgs(th)) | 2.8V | |
| Reverse Transfer Capacitance (Crss@Vds) | 2.4pF | |
| RDS(on) | 175mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 363pF | |
| Gate Charge(Qg) | 5.8nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | onsemi | |
| Condit. | VDFN-6(2x2) | |
| Output Capacitance(Coss) | 24pF | |
| Pd - Power Dissipation | 2.4W | |
| Configuration | - | |
| Drain to Source Voltage | 150V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 2.4A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.8V | |
| Reverse Transfer Capacitance (Crss@Vds) | 2.4pF | |
| RDS(on) | 175mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 363pF | |
| Gate Charge(Qg) | 5.8nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Aide & CommentairesAfficher les produits similaires (0) >
Description
Traduction par IA
This device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The low rDS(on) and gate charge provide excellent switching performance.
Caractéristiques
Traduction par IA
- Maximum r<sub>DS(on)</sub> = 175 mΩ at V<sub>GS</sub> = 10 V, I<sub>D</sub> = 2.4 A
- Maximum r<sub>DS(on)</sub> = 237 mΩ at V<sub>GS</sub> = 6 V, I<sub>D</sub> = 2.0 A
- Ultra-thin profile — new 2x2 mm MicroFET package with maximum thickness of 0.8 mm
- Halogen-free and antimony oxide-free
- RoHS compliant
Applications
Traduction par IA
- DC – DC Primary Switch
- Load Switch
Rupture de stock
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| Qté | Prix unit.(Référence uniquement) | Montant total |
|---|---|---|
| 1+ | $ 1.5288 | $ 1.53 |
| 10+ | $ 1.3046 | $ 13.05 |
| 30+ | $ 1.1812 | $ 35.44 |
| 100+ | $ 1.0431 | $ 104.31 |
| 500+ | $ 0.9813 | $ 490.65 |
| 1,000+ | $ 0.9537 | $ 953.70 |
Boîtier Standard3000/Full Reel | ||
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Spécifications du Produit
Tout
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | onsemi | |
| Condit. | VDFN-6(2x2) | |
| Output Capacitance(Coss) | 24pF | |
| Pd - Power Dissipation | 2.4W | |
| Configuration | - | |
| Drain to Source Voltage | 150V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 2.4A | |
| Gate Threshold Voltage (Vgs(th)) | 2.8V | |
| Reverse Transfer Capacitance (Crss@Vds) | 2.4pF | |
| RDS(on) | 175mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 363pF | |
| Gate Charge(Qg) | 5.8nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | onsemi | |
| Condit. | VDFN-6(2x2) | |
| Output Capacitance(Coss) | 24pF | |
| Pd - Power Dissipation | 2.4W | |
| Configuration | - | |
| Drain to Source Voltage | 150V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 2.4A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.8V | |
| Reverse Transfer Capacitance (Crss@Vds) | 2.4pF | |
| RDS(on) | 175mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 363pF | |
| Gate Charge(Qg) | 5.8nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Aide & CommentairesAfficher les produits similaires (0) >
Description
Traduction par IA
This device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The low rDS(on) and gate charge provide excellent switching performance.
Caractéristiques
Traduction par IA
- Maximum r<sub>DS(on)</sub> = 175 mΩ at V<sub>GS</sub> = 10 V, I<sub>D</sub> = 2.4 A
- Maximum r<sub>DS(on)</sub> = 237 mΩ at V<sub>GS</sub> = 6 V, I<sub>D</sub> = 2.0 A
- Ultra-thin profile — new 2x2 mm MicroFET package with maximum thickness of 0.8 mm
- Halogen-free and antimony oxide-free
- RoHS compliant
Applications
Traduction par IA
- DC – DC Primary Switch
- Load Switch
C890907 Bibliothèque EasyEDA
Conformité & Codes d'Exportation
| Type | Détails |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Détails |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Détails |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Pièces alternatives
| MPN | Fabricant | Conditionnement | Disponibilité | Prix unitaire | ||
|---|---|---|---|---|---|---|
| VBQG1201K | VBsemi Elec | DFN-6(2x2) | 10 | $0.5365 $0.5647 | ||
| SiA456DJ-VB | VBsemi Elec | DFN-6(2x2) | 0 | $0.6530 $0.6873 |