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EDA ModelsEasyEDA
onsemi FQD2N100TM
| Manufacturer | |
| MPN | FQD2N100TM |
| LCSC Part # | C74765 |
| Packaging | TO-252(DPAK) |
| Customer # | |
| Key Attributes | MOSFET N-CH 1kV 1.6A TO-252(DPAK) |
| Datasheet | onsemi FQD2N100TM |
| RoHS Compliance | 2 documents available |
| Alternative Parts | 5 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-252(DPAK) | |
| Output Capacitance(Coss) | 40pF | |
| Pd - Power Dissipation | 2.5W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 1kV | |
| Current - Continuous Drain(Id) | 1.6A | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 6.5pF | |
| RDS(on) | 9Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 520pF | |
| Gate Charge(Qg) | 15.5nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-252(DPAK) | |
| Output Capacitance(Coss) | 40pF | |
| Pd - Power Dissipation | 2.5W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 1kV | |
| Current - Continuous Drain(Id) | 1.6A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 6.5pF | |
| RDS(on) | 9Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 520pF | |
| Gate Charge(Qg) | 15.5nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This N-Channel enhancement mode power MOSFET is produced using proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Features
AI Translation
- 1.6 A, 1000 V, RDS(on) = 9 Ω (Max.) @ VGS = 10 V, ID = 0.8 A
- Low Gate Charge (Typ. 12 nC)
- Low Crss (Typ. 5 pF)
- 100% Avalanche Tested
- RoHS Compliant
Applications
AI Translation
- switched mode power supplies
- active power factor correction (PFC)
- electronic lamp ballasts
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In-Stock: 1,008
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Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.9231$ 0.7847 | $ 0.78 |
| 10+ | $ 0.7441$ 0.6325 | $ 6.33 |
| 30+ | $ 0.6554$ 0.5571 | $ 16.71 |
| 100+ | $ 0.5667$ 0.4817 | $ 48.17 |
| 500+ | $ 0.5141$ 0.4370 | $ 218.50 |
| 1,000+ | $ 0.4862$ 0.4133 | $ 413.30 |
Standard Packaging2500/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-252(DPAK) | |
| Output Capacitance(Coss) | 40pF | |
| Pd - Power Dissipation | 2.5W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 1kV | |
| Current - Continuous Drain(Id) | 1.6A | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 6.5pF | |
| RDS(on) | 9Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 520pF | |
| Gate Charge(Qg) | 15.5nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-252(DPAK) | |
| Output Capacitance(Coss) | 40pF | |
| Pd - Power Dissipation | 2.5W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 1kV | |
| Current - Continuous Drain(Id) | 1.6A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 6.5pF | |
| RDS(on) | 9Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 520pF | |
| Gate Charge(Qg) | 15.5nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This N-Channel enhancement mode power MOSFET is produced using proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Features
AI Translation
- 1.6 A, 1000 V, RDS(on) = 9 Ω (Max.) @ VGS = 10 V, ID = 0.8 A
- Low Gate Charge (Typ. 12 nC)
- Low Crss (Typ. 5 pF)
- 100% Avalanche Tested
- RoHS Compliant
Applications
AI Translation
- switched mode power supplies
- active power factor correction (PFC)
- electronic lamp ballasts
C74765 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Alternative Type | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|---|
| FQD2N90TM | onsemi | Similar | TO-252AA | 4,990 | $ 0.7375 | ||
| AOD2N100 | AOS | Similar | TO-252-2(DPAK) | 20 | $ 0.5276 | ||
| 3N100G-TN3-R | UTC | Similar | TO-252 | 1,067 | $ 0.3661 | ||
| STD2NK100Z | ST | Similar | TO-252(DPAK) | 485 | $ 0.9656 | ||
| TPAOD2N100 | TECH PUBLIC | Similar | TO-252 | 244 | $ 1.0346 |
5 more alternative parts.View all substitutes