GeneSiC Semiconductor MBR60020CT
| Fabricante | |
| N.º de pieza fab. | MBR60020CT |
| Nº LCSC | C7300522 |
| Emb. | - |
| Número de Cliente | |
| Atrib. clave | 1 Pair Common Cathode 600A 20V 750mV@300A Diode Arrays RoHS |
| Hoja de Datos | GeneSiC Semiconductor MBR60020CT |
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Diodes/Rectifiers/Diode Arrays | |
| Fabricante | GeneSiC Semiconductor | |
| Emb. | - | |
| Non-Repetitive Peak Forward Surge Current | 4kA | |
| Diode Configuration | 1 Pair Common Cathode | |
| Current - Rectified | 600A | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - DC Reverse(Vr) | 20V | |
| Voltage - Forward(Vf@If) | 750mV@300A | |
| Reverse Leakage Current (Ir) | 1mA@20V |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Diodes/Rectifiers/Diode Arrays | |
| Fabricante | GeneSiC Semiconductor | |
| Emb. | - | |
| Non-Repetitive Peak Forward Surge Current | 4kA | |
| Diode Configuration | 1 Pair Common Cathode |
| Tipo | Descripción | |
|---|---|---|
| Current - Rectified | 600A | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - DC Reverse(Vr) | 20V | |
| Voltage - Forward(Vf@If) | 750mV@300A | |
| Reverse Leakage Current (Ir) | 1mA@20V |
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Características
Traducción por IA
- High surge capability
- VRRM types from 20V to 40V
- Insensitive to ESD
- Dual tower package
Agotado
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| Cant. | Prec. unit.(Solo como referencia) | Importo total |
|---|---|---|
| 1+ | $ 285.5018 | $ 285.50 |
| 200+ | $ 113.9174 | $ 22783.48 |
| 480+ | $ 110.1107 | $ 52853.14 |
| 1,000+ | $ 108.2301 | $ 108230.10 |
Encapsulado Estándar40/Full Bag | ||
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Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Diodes/Rectifiers/Diode Arrays | |
| Fabricante | GeneSiC Semiconductor | |
| Emb. | - | |
| Non-Repetitive Peak Forward Surge Current | 4kA | |
| Diode Configuration | 1 Pair Common Cathode | |
| Current - Rectified | 600A | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - DC Reverse(Vr) | 20V | |
| Voltage - Forward(Vf@If) | 750mV@300A | |
| Reverse Leakage Current (Ir) | 1mA@20V |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Diodes/Rectifiers/Diode Arrays | |
| Fabricante | GeneSiC Semiconductor | |
| Emb. | - | |
| Non-Repetitive Peak Forward Surge Current | 4kA | |
| Diode Configuration | 1 Pair Common Cathode |
| Tipo | Descripción | |
|---|---|---|
| Current - Rectified | 600A | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - DC Reverse(Vr) | 20V | |
| Voltage - Forward(Vf@If) | 750mV@300A | |
| Reverse Leakage Current (Ir) | 1mA@20V |
Ayuda y comentariosMostrar productos similares (0) >
Características
Traducción por IA
- High surge capability
- VRRM types from 20V to 40V
- Insensitive to ESD
- Dual tower package
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Tipo | Detalles |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |

