Infineon S25HS01GTFABHB033
| Manufacturer | |
| MPN | S25HS01GTFABHB033 |
| LCSC Part # | C6998445 |
| Packaging | FBGA-24(8x8) |
| Customer # | |
| Key Attributes | 1Gbit 1.7V~2V 166MHz SPI FBGA-24(8x8) Memory RoHS |
| Datasheet | Infineon S25HS01GTFABHB033 |
| Alternative Parts | 20 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | Infineon | |
| Packaging | FBGA-24(8x8) | |
| Operating Temperature | -40℃~+105℃ | |
| Features | Power-on reset;Hardware write protection;ECC error correction | |
| Memory Size | 1Gbit | |
| Voltage - Supply | 1.7V~2V | |
| Program / Erase Cycles | 2,560,000 Cycles | |
| Clock Frequency | 166MHz | |
| Data Retention - TDR (Year) | 25 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | - | |
| Standby Supply Current | 0.011mA | |
| Interface | SPI |
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | Infineon | |
| Packaging | FBGA-24(8x8) | |
| Operating Temperature | -40℃~+105℃ | |
| Features | Power-on reset;Hardware write protection;ECC error correction | |
| Memory Size | 1Gbit | |
| Voltage - Supply | 1.7V~2V | |
| Program / Erase Cycles | 2,560,000 Cycles |
| Type | Description | |
|---|---|---|
| Clock Frequency | 166MHz | |
| Data Retention - TDR (Year) | 25 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | - | |
| Standby Supply Current | 0.011mA | |
| Interface | SPI |
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Features
AI Translation
- 45nm technology, 2 bits stored per memory array cell
- Multiple sector architecture options: uniform (all sectors 256KB), hybrid 1 (top or bottom 32×4KB sectors, remainder 256KB), hybrid 2 (top and bottom 16×4KB sectors each, remainder 256KB)
- Page program buffer: 256 or 512 bytes
- 1024-byte (32×32 bytes) one-time programmable Security Silicon region
- Quad SPI interface supporting multiple protocols (1S-1S-4S, 1S-4S-4S, etc.); SDR up to 83 Mbps (166 MHz clock), DDR up to 102 Mbps (102 MHz clock)
- Dual SPI interface supporting 1S-2S-2S protocol; SDR up to 41.5 Mbps (166 MHz clock)
- Standard SPI interface supporting 1S-1S-1S protocol; SDR up to 21 Mbps (166 MHz clock)
- Functional safety features compliant with ISO 26262 ASIL B, ASIL D ready
- Endurance Flex architecture with high-endurance and extended data retention partitions
- Data integrity CRC for memory array error detection
- Secure boot: reports device initialization failures, detects configuration corruption, and provides recovery options
- ECC with single-bit error correction and double-bit error detection
- Sector erase status indicator for power interruption during erase
- Protection features including legacy memory array and configuration protection, and advanced sector protection at individual sector granularity
- Auto-boot for immediate memory array access after power-up
- Hardware reset via CS#, dedicated RESET# pin, or DQ3_RESET# pin
- SFDP support for device capability and feature discovery
- Device ID, manufacturer ID, and identification
- Data integrity: 256Mb main array minimum 640K program/erase cycles; 512Mb: 1.28M cycles; 1Gb: 2.56M cycles; 4KB sectors on all devices minimum 300K program/erase cycles; minimum 25-year data retention
- Operating voltage: 1.7V to 2.0V (HS-T) or 2.7V to 3.6V (HL-T)
- Operating temperature: Industrial -40°C to +85°C; Extended Industrial -40°C to +105°C; Automotive AEC-Q100 Grade 3: -40°C to +85°C; Grade 2: -40°C to +105°C; Grade 1: -40°C to +125°C
- Package options: 256Mb and 512Mb — 16-pin SOIC (300mil) SO3016, 24-ball BGA (6×8 mm), 16-pin SOIC (300mil), 8-contact WSON (6×8 mm); 1Gb — 16-pin SOIC (300mil) SO3016, 24-ball BGA (8×8 mm), 16-pin SOIC (300mil)
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 44.1604 | $ 44.16 |
| 200+ | $ 17.6211 | $ 3524.22 |
| 500+ | $ 17.0317 | $ 8515.85 |
| 1,000+ | $ 16.7407 | $ 16740.70 |
Standard Packaging2500/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | Infineon | |
| Packaging | FBGA-24(8x8) | |
| Operating Temperature | -40℃~+105℃ | |
| Features | Power-on reset;Hardware write protection;ECC error correction | |
| Memory Size | 1Gbit | |
| Voltage - Supply | 1.7V~2V | |
| Program / Erase Cycles | 2,560,000 Cycles | |
| Clock Frequency | 166MHz | |
| Data Retention - TDR (Year) | 25 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | - | |
| Standby Supply Current | 0.011mA | |
| Interface | SPI |
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | Infineon | |
| Packaging | FBGA-24(8x8) | |
| Operating Temperature | -40℃~+105℃ | |
| Features | Power-on reset;Hardware write protection;ECC error correction | |
| Memory Size | 1Gbit | |
| Voltage - Supply | 1.7V~2V | |
| Program / Erase Cycles | 2,560,000 Cycles |
| Type | Description | |
|---|---|---|
| Clock Frequency | 166MHz | |
| Data Retention - TDR (Year) | 25 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | - | |
| Standby Supply Current | 0.011mA | |
| Interface | SPI |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- 45nm technology, 2 bits stored per memory array cell
- Multiple sector architecture options: uniform (all sectors 256KB), hybrid 1 (top or bottom 32×4KB sectors, remainder 256KB), hybrid 2 (top and bottom 16×4KB sectors each, remainder 256KB)
- Page program buffer: 256 or 512 bytes
- 1024-byte (32×32 bytes) one-time programmable Security Silicon region
- Quad SPI interface supporting multiple protocols (1S-1S-4S, 1S-4S-4S, etc.); SDR up to 83 Mbps (166 MHz clock), DDR up to 102 Mbps (102 MHz clock)
- Dual SPI interface supporting 1S-2S-2S protocol; SDR up to 41.5 Mbps (166 MHz clock)
- Standard SPI interface supporting 1S-1S-1S protocol; SDR up to 21 Mbps (166 MHz clock)
- Functional safety features compliant with ISO 26262 ASIL B, ASIL D ready
- Endurance Flex architecture with high-endurance and extended data retention partitions
- Data integrity CRC for memory array error detection
- Secure boot: reports device initialization failures, detects configuration corruption, and provides recovery options
- ECC with single-bit error correction and double-bit error detection
- Sector erase status indicator for power interruption during erase
- Protection features including legacy memory array and configuration protection, and advanced sector protection at individual sector granularity
- Auto-boot for immediate memory array access after power-up
- Hardware reset via CS#, dedicated RESET# pin, or DQ3_RESET# pin
- SFDP support for device capability and feature discovery
- Device ID, manufacturer ID, and identification
- Data integrity: 256Mb main array minimum 640K program/erase cycles; 512Mb: 1.28M cycles; 1Gb: 2.56M cycles; 4KB sectors on all devices minimum 300K program/erase cycles; minimum 25-year data retention
- Operating voltage: 1.7V to 2.0V (HS-T) or 2.7V to 3.6V (HL-T)
- Operating temperature: Industrial -40°C to +85°C; Extended Industrial -40°C to +105°C; Automotive AEC-Q100 Grade 3: -40°C to +85°C; Grade 2: -40°C to +105°C; Grade 1: -40°C to +125°C
- Package options: 256Mb and 512Mb — 16-pin SOIC (300mil) SO3016, 24-ball BGA (6×8 mm), 16-pin SOIC (300mil), 8-contact WSON (6×8 mm); 1Gb — 16-pin SOIC (300mil) SO3016, 24-ball BGA (8×8 mm), 16-pin SOIC (300mil)
C6998445 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | 3A991B1A |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | 3A991B1A |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| Type | Details |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| S26HS01GTFPBHB030 | Infineon | FBGA-24(8x8) | 0 | $ 44.2106 | ||
| S25HS01GTDPBHB033 | Infineon | FBGA-24(8x8) | 0 | $ 36.1763 | ||
| S25HS01GTFABHV030 | Infineon | FBGA-24(8x8) | 0 | $ 32.6014 | ||
| S26HS01GTFPBHV023 | Infineon | FBGA-24(8x8) | 0 | $ 39.8024 | ||
| S26HS01GTGABHV030 | Infineon | FBGA-24(8x8) | 0 | $ 41.2142 | ||
| S28HS01GTGZBHV030 | Infineon | FBGA-24(8x8) | 0 | $ 40.1562 | ||
| S28HS01GTGZBHV033 | Infineon | FBGA-24(8x8) | 0 | $ 41.772 | ||
| S26HS01GTFPBHB020 | Infineon | FBGA-24(8x8) | 0 | $ 44.1982 | ||
| S28HS01GTGZBHB030 | Infineon | FBGA-24(8x8) | 0 | $ 45.1505 | ||
| S26HS01GTGABHB023 | Infineon | FBGA-24(8x8) | 0 | $ 50.7524 | ||
| S26HS01GTGABHB030 | Infineon | FBGA-24(8x8) | 0 | $ 38.101 | ||
| S28HS01GTGZBHB033 | Infineon | FBGA-24(8x8) | 0 | $ 50.7524 | ||
| S26HS01GTFPBHB023 | Infineon | FBGA-24(8x8) | 0 | $ 48.6263 | ||
| S26HS01GTGABHV020 | Infineon | FBGA-24(8x8) | 0 | $ 41.2026 | ||
| S26HS01GTGABHB033 | Infineon | FBGA-24(8x8) | 0 | $ 50.7524 | ||
| S26HS01GTGABHV023 | Infineon | FBGA-24(8x8) | 0 | $ 41.7691 | ||
| S26HS01GTGABHV033 | Infineon | FBGA-24(8x8) | 0 | $ 41.7691 | ||
| S28HS01GTFPBHV033 | Infineon | FBGA-24(8x8) | 0 | $ 39.8051 | ||
| S25HS01GTDPBHM030 | Infineon | FBGA-24(8x8) | 0 | $ 37.1525 | ||
| S25HS01GTFABHA030 | Infineon | FBGA-24(8x8) | 0 | $ 33.4598 |

