Infineon IPA60R280C6XKSA1
| Manufacturer | |
| MPN | IPA60R280C6XKSA1 |
| LCSC Part # | C669889 |
| Packaging | TO-220FP-3 |
| Customer # | |
| Key Attributes | MOSFET N-CH 650V 13.8A TO-220FP-3 |
| Datasheet | Infineon IPA60R280C6XKSA1 |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 5 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-220FP-3 | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 60pF | |
| Current - Continuous Drain(Id) | 13.8A | |
| Ciss-Input Capacitance | 950pF | |
| Pd - Power Dissipation | 104W | |
| RDS(on) | 280mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 43nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-220FP-3 | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 60pF | |
| Current - Continuous Drain(Id) | 13.8A |
| Type | Description | |
|---|---|---|
| Ciss-Input Capacitance | 950pF | |
| Pd - Power Dissipation | 104W | |
| RDS(on) | 280mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 43nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
Introduction
CoolMOS™ is a revolutionary technology for high-voltage power MOSFETs, designed based on the Super Junction (SJ) principle. The CoolMOS™ C6 series combines the expertise of a leading SJ MOSFET supplier with best-in-class innovation. The offered devices deliver all the advantages of fast-switching SJ MOSFETs without compromising ease of use. Extremely low switching and conduction losses make switching applications more efficient, compact, lightweight, and thermally optimized.
Features
- Ultra-low losses due to extremely low figure of merit Rdson*Qg and Eoss
- Extremely high commutation robustness
- Easy to use/drive
- JEDEC qualified, lead-free plating, halogen-free
Applications
- Power Factor Correction (PFC) stage
- Hard-switching PWM stage
- Resonant-switching PWM stage, e.g., for PC power supplies, adapters, LCD and plasma TVs, lighting, servers, telecom, and UPS
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 2.962 | $ 2.96 |
| 10+ | $ 2.8237 | $ 28.24 |
| 50+ | $ 2.7407 | $ 137.04 |
| 100+ | $ 2.6561 | $ 265.61 |
| 500+ | $ 2.6177 | $ 1308.85 |
| 1,000+ | $ 2.6008 | $ 2600.80 |
Standard Packaging50/Full Tube | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-220FP-3 | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 60pF | |
| Current - Continuous Drain(Id) | 13.8A | |
| Ciss-Input Capacitance | 950pF | |
| Pd - Power Dissipation | 104W | |
| RDS(on) | 280mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 43nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-220FP-3 | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 60pF | |
| Current - Continuous Drain(Id) | 13.8A |
| Type | Description | |
|---|---|---|
| Ciss-Input Capacitance | 950pF | |
| Pd - Power Dissipation | 104W | |
| RDS(on) | 280mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 43nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
Introduction
CoolMOS™ is a revolutionary technology for high-voltage power MOSFETs, designed based on the Super Junction (SJ) principle. The CoolMOS™ C6 series combines the expertise of a leading SJ MOSFET supplier with best-in-class innovation. The offered devices deliver all the advantages of fast-switching SJ MOSFETs without compromising ease of use. Extremely low switching and conduction losses make switching applications more efficient, compact, lightweight, and thermally optimized.
Features
- Ultra-low losses due to extremely low figure of merit Rdson*Qg and Eoss
- Extremely high commutation robustness
- Easy to use/drive
- JEDEC qualified, lead-free plating, halogen-free
Applications
- Power Factor Correction (PFC) stage
- Hard-switching PWM stage
- Resonant-switching PWM stage, e.g., for PC power supplies, adapters, LCD and plasma TVs, lighting, servers, telecom, and UPS
C669889 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Alternative Type | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|---|
| TPA65R260M | WUXI UNIGROUP MICRO | Similar | TO-220F | 10 | $ 0.8081 | ||
| YFW65R280AF | YFW | Similar | TO-220F | 50 | $ 1.3766 | ||
| GSA15N65E | XCH | Similar | TO-220F | 80 | $ 1.1185 | ||
| GSA18N65E | XCH | Similar | TO-220F | 17 | $ 1.1284 | ||
| WML80R350S | Wayon | Similar | TO-220F | 581 | $ 1.1861 |



