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onsemi FDMS86500L

Manufacturer
onsemi
MPN
FDMS86500L
LCSC Part #
C606113
Packaging
PQFN-8(5x6)
Customer #
Key Attributes
MOSFET N-CH 60V 158A DFN-8(4.9x5.8)
Datasheetonsemi FDMS86500L
RoHS Compliance4 documents available
Alternative Parts1
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingPQFN-8(5x6)
Output Capacitance(Coss)1.47nF
Ciss-Input Capacitance9.42nF
Pd - Power Dissipation104W
Configuration-
Operating Temperature-55℃~+150℃
Drain to Source Voltage60V
Current - Continuous Drain(Id)158A
Reverse Transfer Capacitance (Crss)50pF
RDS(on)2.1mΩ@10V
Number1 N-channel
Gate Charge(Qg)117nC
Vgs±20V
Gate Threshold Voltage (Vgs(th))1.8V
TypeN-Channel
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Introduction

AI Translation

This N−Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.

Features

AI Translation
  • Max rDS(on)=2.5 mΩ at VGS=10 V, ID=25 A
  • Max rDS(on)=3.7 mΩ at VGS=4.5 V, ID=20 A
  • Advanced Package and Silicon combination for low rDS(on) and high efficiency
  • Next generation enhanced body diode technology, engineered for soft recovery
  • MSL1 robust package design
  • 100% UIL tested
  • RoHS Compliant

Applications

AI Translation
  • Primary Switch in Isolated DC−DC
  • Synchronous Rectifier
  • Load Switch