VISHAY IRF840LCPBF-BE3
| Manufacturer | |
| MPN | IRF840LCPBF-BE3 |
| LCSC Part # | C5772290 |
| Packaging | TO-220AB |
| Customer # | |
| Key Attributes | 125W 500V 5.1A 2V 850mΩ@10V 1 N-channel N-Channel TO-220AB Single FETs, MOSFETs |
| Datasheet | VISHAY IRF840LCPBF-BE3 |
| Alternative Parts | 10 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | TO-220AB | |
| Output Capacitance(Coss) | 170pF | |
| Pd - Power Dissipation | 125W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 500V | |
| Current - Continuous Drain(Id) | 5.1A | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 18pF | |
| RDS(on) | 850mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.1nF | |
| Gate Charge(Qg) | 39nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | TO-220AB | |
| Output Capacitance(Coss) | 170pF | |
| Pd - Power Dissipation | 125W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 500V | |
| Current - Continuous Drain(Id) | 5.1A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 18pF | |
| RDS(on) | 850mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.1nF | |
| Gate Charge(Qg) | 39nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
Introduction
This new low-charge power MOSFET significantly reduces gate charge compared to conventional MOSFETs. Utilizing a new LCDMOS technology, it achieves improved device performance without increasing product cost, lowers gate drive requirements, and reduces overall system cost. In addition, the device reduces switching losses and improves efficiency across various high-frequency applications. With this new low-charge MOSFET, frequencies of several MHz can be achieved under high-current conditions. These device improvements, combined with the inherent ruggedness and reliability of power MOSFETs, provide designers with a new standard power transistor for switching applications.
Features
- Ultra-low gate charge
- Reduced gate drive requirements
- Enhanced 30 V VGS rating
- Low Ciss, Coss, Crss
- Extremely high frequency operation
- Repetitive avalanche rated
Applications
- Server and telecom power supplies - Switch Mode Power Supplies (SMPS) - Power Factor Correction (PFC) - Lighting - High Intensity Discharge (HID) lamps - Fluorescent lamp ballast lighting - Industrial applications - Welding - Motor drives - Battery chargers - Solar (photovoltaic inverters)
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 2.3503 | $ 2.35 |
| 200+ | $ 0.938 | $ 187.60 |
| 500+ | $ 0.9062 | $ 453.10 |
| 1,000+ | $ 0.891 | $ 891.00 |
Standard Packaging1000/Full Reel | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | TO-220AB | |
| Output Capacitance(Coss) | 170pF | |
| Pd - Power Dissipation | 125W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 500V | |
| Current - Continuous Drain(Id) | 5.1A | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 18pF | |
| RDS(on) | 850mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.1nF | |
| Gate Charge(Qg) | 39nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | TO-220AB | |
| Output Capacitance(Coss) | 170pF | |
| Pd - Power Dissipation | 125W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 500V | |
| Current - Continuous Drain(Id) | 5.1A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 18pF | |
| RDS(on) | 850mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.1nF | |
| Gate Charge(Qg) | 39nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
Introduction
This new low-charge power MOSFET significantly reduces gate charge compared to conventional MOSFETs. Utilizing a new LCDMOS technology, it achieves improved device performance without increasing product cost, lowers gate drive requirements, and reduces overall system cost. In addition, the device reduces switching losses and improves efficiency across various high-frequency applications. With this new low-charge MOSFET, frequencies of several MHz can be achieved under high-current conditions. These device improvements, combined with the inherent ruggedness and reliability of power MOSFETs, provide designers with a new standard power transistor for switching applications.
Features
- Ultra-low gate charge
- Reduced gate drive requirements
- Enhanced 30 V VGS rating
- Low Ciss, Coss, Crss
- Extremely high frequency operation
- Repetitive avalanche rated
Applications
- Server and telecom power supplies - Switch Mode Power Supplies (SMPS) - Power Factor Correction (PFC) - Lighting - High Intensity Discharge (HID) lamps - Fluorescent lamp ballast lighting - Industrial applications - Welding - Motor drives - Battery chargers - Solar (photovoltaic inverters)
C5772290 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| IRF840LCPBF | VISHAY | TO-220AB | 9 | $ 1.9317 | ||
| IRF840APBF | VISHAY | TO-220AB | 5,000 | $ 1.0251 | ||
| STP24NM60N | ST | TO-220 | 24 | $ 5.5121 | ||
| SMT12N60 | HUAKE | TO-220 | 236 | $ 0.4527 | ||
| FDP5N50NZ-VB | VBsemi Elec | TO-220 | 17 | $0.7899 $0.9292 | ||
| BME10N65 | BORN | TO-220AB | 345 | $ 0.3798 | ||
| WGP10N60S | Wild Goose | TO-220 | 250 | $ 0.3532 | ||
| IRF840APBF-BE3 | VISHAY | TO-220AB | 0 | $ 1.1403 | ||
| IRFBC40LCPBF | VISHAY | TO-220AB | 0 | $ 2.8158 | ||
| IRFBC40PBF-BE3 | VISHAY | TO-220AB | 0 | $ 2.5422 |