Infineon IRS2111STRPBF
| Fabricante | |
| N.º de pieza fab. | IRS2111STRPBF |
| Nº LCSC | C538275 |
| Emb. | SOIC-8 |
| Número de Cliente | |
| Atrib. clave | 10V~20V 420mA 200mA SOIC-8 Gate Drivers RoHS |
| Hoja de Datos | Infineon IRS2111STRPBF |
| Cumplimiento RoHS | 1 documentos disponibles |
| Piezas alternativas | 10 |
Especificaciones del Producto
| Tipo | Descripción | |
|---|---|---|
| Categoría | Integrated Circuits (ICs)/Power Management (PMIC)/Gate Drivers | |
| Fabricante | Infineon | |
| Emb. | SOIC-8 | |
| Input Logic Level - Low | - | |
| Low Level Delay Time | - | |
| High Level Delay Time | - | |
| Quiescent Current | - | |
| Input Logic Level - High | - | |
| Voltage - Supply | 10V~20V | |
| Operating Temperature | -40℃~+125℃ | |
| Driven Configuration | Half-Bridge | |
| Current - Output Low(IOL) | 420mA | |
| Rise Time | 75ns | |
| Fall Time | 35ns | |
| Features | Dead-time control;Interleaved conduction protection | |
| Current - Output High(IOH) | 200mA | |
| Load Type | MOSFET;IGBT |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Integrated Circuits (ICs)/Power Management (PMIC)/Gate Drivers | |
| Fabricante | Infineon | |
| Emb. | SOIC-8 | |
| Input Logic Level - Low | - | |
| Low Level Delay Time | - | |
| High Level Delay Time | - | |
| Quiescent Current | - | |
| Input Logic Level - High | - | |
| Voltage - Supply | 10V~20V |
| Tipo | Descripción | |
|---|---|---|
| Operating Temperature | -40℃~+125℃ | |
| Driven Configuration | Half-Bridge | |
| Current - Output Low(IOL) | 420mA | |
| Rise Time | 75ns | |
| Fall Time | 35ns | |
| Features | Dead-time control;Interleaved conduction protection | |
| Current - Output High(IOH) | 200mA | |
| Load Type | MOSFET;IGBT |
Descripción
The IRS2111 is a high voltage, high speed power MOSFET and IGBT driver with dependent high-side and low-side referenced output channels designed for half-bridge applications. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic input is compatible with standard CMOS outputs. The output drivers feature a high pulse current buffer stage designed for minimum driver crossconduction. Internal deadtime is provided to avoid shoot-through in the output half-bridge. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600 V.
Características
- Floating channel designed for bootstrap operation
- Fully operational to +600 V
- Tolerant to negative transient voltage, dV/dt immune
- Gate drive supply range from 10 V to 20 V
- Undervoltage lockout for both channels
- CMOS Schmitt-triggered inputs with pull-down
- Matched propagation delay for both channels
- Internally set deadtime
- High-side output in phase with input
- RoHS compliant
| Cant. | Prec. unit.(Solo como referencia) | Importo total |
|---|---|---|
| 1+ | $ 1.5221 | $ 1.52 |
| 200+ | $ 0.5898 | $ 117.96 |
| 500+ | $ 0.5692 | $ 284.60 |
| 1,000+ | $ 0.5581 | $ 558.10 |
Encapsulado Estándar2500/Full Reel | ||
Especificaciones del Producto
| Tipo | Descripción | |
|---|---|---|
| Categoría | Integrated Circuits (ICs)/Power Management (PMIC)/Gate Drivers | |
| Fabricante | Infineon | |
| Emb. | SOIC-8 | |
| Input Logic Level - Low | - | |
| Low Level Delay Time | - | |
| High Level Delay Time | - | |
| Quiescent Current | - | |
| Input Logic Level - High | - | |
| Voltage - Supply | 10V~20V | |
| Operating Temperature | -40℃~+125℃ | |
| Driven Configuration | Half-Bridge | |
| Current - Output Low(IOL) | 420mA | |
| Rise Time | 75ns | |
| Fall Time | 35ns | |
| Features | Dead-time control;Interleaved conduction protection | |
| Current - Output High(IOH) | 200mA | |
| Load Type | MOSFET;IGBT |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Integrated Circuits (ICs)/Power Management (PMIC)/Gate Drivers | |
| Fabricante | Infineon | |
| Emb. | SOIC-8 | |
| Input Logic Level - Low | - | |
| Low Level Delay Time | - | |
| High Level Delay Time | - | |
| Quiescent Current | - | |
| Input Logic Level - High | - | |
| Voltage - Supply | 10V~20V |
| Tipo | Descripción | |
|---|---|---|
| Operating Temperature | -40℃~+125℃ | |
| Driven Configuration | Half-Bridge | |
| Current - Output Low(IOL) | 420mA | |
| Rise Time | 75ns | |
| Fall Time | 35ns | |
| Features | Dead-time control;Interleaved conduction protection | |
| Current - Output High(IOH) | 200mA | |
| Load Type | MOSFET;IGBT |
Descripción
The IRS2111 is a high voltage, high speed power MOSFET and IGBT driver with dependent high-side and low-side referenced output channels designed for half-bridge applications. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic input is compatible with standard CMOS outputs. The output drivers feature a high pulse current buffer stage designed for minimum driver crossconduction. Internal deadtime is provided to avoid shoot-through in the output half-bridge. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600 V.
Características
- Floating channel designed for bootstrap operation
- Fully operational to +600 V
- Tolerant to negative transient voltage, dV/dt immune
- Gate drive supply range from 10 V to 20 V
- Undervoltage lockout for both channels
- CMOS Schmitt-triggered inputs with pull-down
- Matched propagation delay for both channels
- Internally set deadtime
- High-side output in phase with input
- RoHS compliant
C538275 Biblioteca EasyEDA
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8542399000 |
| USHTS | 8542390001 |
| TARIC | 8542399000 |
| CAHTS | 8542390000 |
| BRHTS | 85423999 |
| INHTS | 85423900 |
| MXHTS | 8542.39.99 |
| Tipo | Detalles |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8542399000 |
| USHTS | 8542390001 |
| TARIC | 8542399000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8542390000 |
| BRHTS | 85423999 |
| INHTS | 85423900 |
| MXHTS | 8542.39.99 |
Piezas alternativas
| MPN | Fabricante | Empaque | Disponibilidad | Precio unitario | ||
|---|---|---|---|---|---|---|
| L6395DTR | ST | SO-8 | 23 | $ 2.5016 | ||
| L6395D | ST | SO-8 | 7 | $ 2.3853 | ||
| L6398DTR | ST | SO-8 | 5 | $ 2.903 | ||
| IRS2304STR(UMW) | UMW | SOP-8 | 8,161 | $ 0.3458 | ||
| IRS2104STR(UMW) | UMW | SOP-8 | 7,853 | $ 0.3379 | ||
| FAN7382MX(UMW) | UMW | SOP-8 | 3,859 | $ 0.4043 | ||
| LN4201SF-G | JSMSEMI | SOP-8 | 3,135 | $ 0.2159 | ||
| IRS2111SPBF | Infineon | SOIC-8 | 0 | $ 1.3939 | ||
| L6398D | ST | SOIC-8 | 0 | $ 3.7869 | ||
| L6399DTR | ST | SOP-8 | 0 | $ 1.6613 |