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Infineon AUIRF4905
| Fabricante | |
| N.º de pieza fab. | AUIRF4905 |
| Nº LCSC | C533263 |
| Emb. | TO-220AB |
| Número de Cliente | |
| Atrib. clave | MOSFET N-CH 55V 74A TO-220AB |
| Hoja de Datos | Infineon AUIRF4905 |
| Cumplimiento RoHS | 1 documentos disponibles |
| Piezas alternativas | 10 |
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Infineon | |
| Emb. | TO-220AB | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 55V | |
| Current - Continuous Drain(Id) | 74A | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 200W | |
| Reverse Transfer Capacitance (Crss@Vds) | 640pF | |
| RDS(on) | 20mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.4nF | |
| Gate Charge(Qg) | 180nC@10V |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Infineon | |
| Emb. | TO-220AB | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 55V | |
| Current - Continuous Drain(Id) | 74A | |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Tipo | Descripción | |
|---|---|---|
| Pd - Power Dissipation | 200W | |
| Reverse Transfer Capacitance (Crss@Vds) | 640pF | |
| RDS(on) | 20mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.4nF | |
| Gate Charge(Qg) | 180nC@10V |
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Descripción
Traducción por IA
Specifically designed for Automotive applications, this cellular design of HEXFET Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.
Características
Traducción por IA
- Advanced Planar Technology
- Low On-Resistance
- Dynamic dV/dT Rating
- 175°C Operating Temperature
- Fast Switching
- Fully Avalanche Rated
- Repetitive Avalanche Allowed up to Tjmax
- Lead-Free, RoHS Compliant Automotive Qualified
Agotado
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Mínimo: 1Múltiplo: 1Unidad de venta: Piece
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| Cant. | Prec. unit.(Solo como referencia) | Importo total |
|---|---|---|
| 1+ | $ 7.9385 | $ 7.94 |
Encapsulado Estándar1000/Full Tube | ||
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Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Infineon | |
| Emb. | TO-220AB | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 55V | |
| Current - Continuous Drain(Id) | 74A | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 200W | |
| Reverse Transfer Capacitance (Crss@Vds) | 640pF | |
| RDS(on) | 20mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.4nF | |
| Gate Charge(Qg) | 180nC@10V |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Infineon | |
| Emb. | TO-220AB | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 55V | |
| Current - Continuous Drain(Id) | 74A | |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Tipo | Descripción | |
|---|---|---|
| Pd - Power Dissipation | 200W | |
| Reverse Transfer Capacitance (Crss@Vds) | 640pF | |
| RDS(on) | 20mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.4nF | |
| Gate Charge(Qg) | 180nC@10V |
Ayuda y comentariosMostrar productos similares (0) >
Descripción
Traducción por IA
Specifically designed for Automotive applications, this cellular design of HEXFET Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.
Características
Traducción por IA
- Advanced Planar Technology
- Low On-Resistance
- Dynamic dV/dT Rating
- 175°C Operating Temperature
- Fast Switching
- Fully Avalanche Rated
- Repetitive Avalanche Allowed up to Tjmax
- Lead-Free, RoHS Compliant Automotive Qualified
C533263 Biblioteca EasyEDA
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Detalles |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Piezas alternativas
| MPN | Fabricante | Empaque | Disponibilidad | Precio unitario | ||
|---|---|---|---|---|---|---|
| IRF3007PBF | Infineon | TO-220AB | 5 | $ 3.4261 | ||
| CMP1405 | Cmos | TO-220 | 17 | $0.5279 $0.5556 | ||
| MPG180N10P | Minos | TO-220 | 46 | $ 1.0545 | ||
| SP010N04BGTQ | Siliup | TO-220-3L | 268 | $ 0.5442 | ||
| NTE2991 | NTE Electronics | TO-220 | 0 | $ 7.5962 | ||
| AOT66919L | AOS | TO-220 | 0 | $ 1.407 | ||
| IPP085N06LGIN | Infineon | TO-220-3 | 0 | $ 0.7962 | ||
| IPP085N06LGAKSA1 | Infineon | TO-220-3 | 0 | $ 0.7962 | ||
| AUIRL3705N | Infineon | TO-220AB | 0 | $ 1.5353 | ||
| TSP15N06A | WUXI UNIGROUP MICRO | TO-220 | 0 | $ 1.1078 |