ST STW48N60M6
| Manufacturer | |
| MPN | STW48N60M6 |
| LCSC Part # | C501092 |
| Packaging | TO-247-3 |
| Customer # | |
| Key Attributes | 250W 600V 39A 4V 61mΩ@10V 1 N-channel N-Channel TO-247-3 Single FETs, MOSFETs RoHS |
| Datasheet | ST STW48N60M6 |
| RoHS Compliance | 2 documents available |
| Alternative Parts | 5 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-247-3 | |
| Output Capacitance(Coss) | 202pF | |
| Pd - Power Dissipation | 250W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 39A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 3.1pF | |
| RDS(on) | 61mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.578nF | |
| Gate Charge(Qg) | 57nC@480V | |
| Vgs | ±25V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-247-3 | |
| Output Capacitance(Coss) | 202pF | |
| Pd - Power Dissipation | 250W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 39A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 3.1pF | |
| RDS(on) | 61mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.578nF | |
| Gate Charge(Qg) | 57nC@480V | |
| Vgs | ±25V | |
| Type | N-Channel |
Introduction
The new MDmesh M6 technology incorporates the latest technological advancements, applied to the well-known and mature SJ MOSFET MDmesh product series. STMicroelectronics has upgraded its previous-generation MDmesh devices with the new M6 technology, which delivers significant improvement in on-resistance RDS(on) per unit area while maintaining excellent switching performance, providing end applications with a highly efficient and user-friendly experience.
Features
- Reduced switching losses
- Lower RDS(on) per unit area compared to previous generation
- Low gate input resistance
- 100% avalanche tested
- Zener protection
Applications
- Switching Applications
- LLC Converter
- Boost PFC Converter
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 9.3823 | $ 9.38 |
| 10+ | $ 8.5488 | $ 85.49 |
| 30+ | $ 8.0403 | $ 241.21 |
| 90+ | $ 7.6147 | $ 685.32 |
Standard Packaging30/Full Tube | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-247-3 | |
| Output Capacitance(Coss) | 202pF | |
| Pd - Power Dissipation | 250W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 39A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 3.1pF | |
| RDS(on) | 61mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.578nF | |
| Gate Charge(Qg) | 57nC@480V | |
| Vgs | ±25V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-247-3 | |
| Output Capacitance(Coss) | 202pF | |
| Pd - Power Dissipation | 250W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 39A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 3.1pF | |
| RDS(on) | 61mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.578nF | |
| Gate Charge(Qg) | 57nC@480V | |
| Vgs | ±25V | |
| Type | N-Channel |
Introduction
The new MDmesh M6 technology incorporates the latest technological advancements, applied to the well-known and mature SJ MOSFET MDmesh product series. STMicroelectronics has upgraded its previous-generation MDmesh devices with the new M6 technology, which delivers significant improvement in on-resistance RDS(on) per unit area while maintaining excellent switching performance, providing end applications with a highly efficient and user-friendly experience.
Features
- Reduced switching losses
- Lower RDS(on) per unit area compared to previous generation
- Low gate input resistance
- 100% avalanche tested
- Zener protection
Applications
- Switching Applications
- LLC Converter
- Boost PFC Converter
C501092 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Alternative Type | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|---|
| MMQ60R078RFTH | MagnaChip Semicon | Similar | TO-247 | 108 | $ 2.6782 | ||
| IPW60R055CM8XKSA1 | Infineon | Similar | TO-247-3 | 1 | $ 7.8941 | ||
| SIHG068N60EF-GE3 | VISHAY | Similar | TO-247AC | 22 | $ 5.5582 | ||
| STWA57N65M5 | ST | Similar | TO-247 | 68 | $ 5.36 | ||
| APT30M70BVR-VB | VBsemi Elec | Similar | TO-247AC | 10 | $7.0968 $8.3491 |



