ST STPSC20G065WL
| Fabricant | |
| Réf. Fab. | STPSC20G065WL |
| Réf. LCSC | C47146830 |
| Condit. | DO-247LL |
| Numéro Client | |
| Caract. clés | 1 Independent 650V 1.45V@20A 20A DO-247LL Single Diodes RoHS |
| Fiche Technique | ST STPSC20G065WL |
| Conformité RoHS | 3 documents disponibles |
Spécifications du Produit
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Fabricant | ST | |
| Condit. | DO-247LL | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -55℃~+175℃ | |
| Voltage - DC Reverse (Vr) (Max) | 650V | |
| Voltage - Forward(Vf@If) | 1.45V@20A | |
| Reverse Leakage Current (Ir) | 200uA@650V | |
| Current - Rectified | 20A | |
| Non-Repetitive Peak Forward Surge Current | 135A |
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Fabricant | ST | |
| Condit. | DO-247LL | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -55℃~+175℃ |
| Type | Description | |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 650V | |
| Voltage - Forward(Vf@If) | 1.45V@20A | |
| Reverse Leakage Current (Ir) | 200uA@650V | |
| Current - Rectified | 20A | |
| Non-Repetitive Peak Forward Surge Current | 135A |
Description
STPSC20G065 is an ultra-high-performance power Schottky rectifier in a DO-247 LL long-lead package, manufactured on a silicon carbide substrate. The wide-bandgap material enables the design of a low-VF Schottky diode structure rated at 650 V. Thanks to the Schottky structure, there is no reverse recovery at turn-off and ringing is negligible. Its minimal capacitive turn-off behavior is independent of temperature. Based on the latest technology optimizations, this diode features improved forward surge current capability, making it well-suited for power factor correction circuits to enhance performance under hard-switching conditions. With the design improvements of the latest "G" series SiC diodes and the tests implemented in production, this diode is becoming a reference point for application design in terms of the combination of efficiency and application robustness.
Caractéristiques
- No reverse recovery charge within application current range
- Switching behavior independent of temperature
- High forward surge current capability
- Junction temperature Tj operating range from -55℃ to 175℃
- ECOPACK2 compliant components
Applications
- Solar inverters
- Air conditioner outdoor units
- UPS power supplies
- Telecom / server power equipment
- EV charging stations
| Qté | Prix unit. | Montant total |
|---|---|---|
| 1+ | $ 5.708 | $ 5.71 |
| 10+ | $ 5.6326 | $ 56.33 |
| 60+ | $ 5.5835 | $ 335.01 |
| 120+ | $ 5.5327 | $ 663.92 |
Boîtier Standard60/Full Tube | ||
Spécifications du Produit
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Fabricant | ST | |
| Condit. | DO-247LL | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -55℃~+175℃ | |
| Voltage - DC Reverse (Vr) (Max) | 650V | |
| Voltage - Forward(Vf@If) | 1.45V@20A | |
| Reverse Leakage Current (Ir) | 200uA@650V | |
| Current - Rectified | 20A | |
| Non-Repetitive Peak Forward Surge Current | 135A |
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Fabricant | ST | |
| Condit. | DO-247LL | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -55℃~+175℃ |
| Type | Description | |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 650V | |
| Voltage - Forward(Vf@If) | 1.45V@20A | |
| Reverse Leakage Current (Ir) | 200uA@650V | |
| Current - Rectified | 20A | |
| Non-Repetitive Peak Forward Surge Current | 135A |
Description
STPSC20G065 is an ultra-high-performance power Schottky rectifier in a DO-247 LL long-lead package, manufactured on a silicon carbide substrate. The wide-bandgap material enables the design of a low-VF Schottky diode structure rated at 650 V. Thanks to the Schottky structure, there is no reverse recovery at turn-off and ringing is negligible. Its minimal capacitive turn-off behavior is independent of temperature. Based on the latest technology optimizations, this diode features improved forward surge current capability, making it well-suited for power factor correction circuits to enhance performance under hard-switching conditions. With the design improvements of the latest "G" series SiC diodes and the tests implemented in production, this diode is becoming a reference point for application design in terms of the combination of efficiency and application robustness.
Caractéristiques
- No reverse recovery charge within application current range
- Switching behavior independent of temperature
- High forward surge current capability
- Junction temperature Tj operating range from -55℃ to 175℃
- ECOPACK2 compliant components
Applications
- Solar inverters
- Air conditioner outdoor units
- UPS power supplies
- Telecom / server power equipment
- EV charging stations
Conformité & Codes d'Exportation
| Type | Détails |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | - |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Type | Détails |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | - |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Type | Détails |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |

