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onsemi FDMC86139P
| Manufacturer | |
| MPN | FDMC86139P |
| LCSC Part # | C463243 |
| Packaging | WDFN-8(3.3x3.3) |
| Customer # | |
| Key Attributes | MOSFET P-CH 100V 15A WDFN-8(3.3x3.3) |
| Datasheet | onsemi FDMC86139P |
| RoHS Compliance | 2 documents available |
| Alternative Parts | 8 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | WDFN-8(3.3x3.3) | |
| Output Capacitance(Coss) | 178pF | |
| Pd - Power Dissipation | 40W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 15A | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF | |
| RDS(on) | 67mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.335nF | |
| Gate Charge(Qg) | 22nC@10V | |
| Vgs | ±25V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | WDFN-8(3.3x3.3) | |
| Output Capacitance(Coss) | 178pF | |
| Pd - Power Dissipation | 40W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 15A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF | |
| RDS(on) | 67mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.335nF | |
| Gate Charge(Qg) | 22nC@10V | |
| Vgs | ±25V | |
| Type | P-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This P−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH technology. This very high density process is especially tailored to minimize on−state resistance and optimized for superior switching performance.
Features
AI Translation
- Max rDS(on)=67 mΩ at VGS=-10 Vz , ID=-4.4 A
- Max rDS(on)=89 mΩ at VGS=-6 V, ID=-3.6 A
- Very Low RDS−On Mid Voltage P Channel Silicon Technology Optimised for Low Qg
- This Product is Optimised for Fast Switching Applications as well as Load Switch Applications
- 100% UIL Tested
- These Devices are Pb−Free and are RoHS Compliant
Applications
AI Translation
- Active Clamp Switch
- Load Switch
In-Stock: 5,164
5,164 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.1915 | $ 1.19 |
| 10+ | $ 0.9686 | $ 9.69 |
| 30+ | $ 0.8457 | $ 25.37 |
| 100+ | $ 0.7064 | $ 70.64 |
| 500+ | $ 0.6441 | $ 322.05 |
| 1,000+ | $ 0.6162 | $ 616.20 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | WDFN-8(3.3x3.3) | |
| Output Capacitance(Coss) | 178pF | |
| Pd - Power Dissipation | 40W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 15A | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF | |
| RDS(on) | 67mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.335nF | |
| Gate Charge(Qg) | 22nC@10V | |
| Vgs | ±25V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | WDFN-8(3.3x3.3) | |
| Output Capacitance(Coss) | 178pF | |
| Pd - Power Dissipation | 40W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 15A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF | |
| RDS(on) | 67mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.335nF | |
| Gate Charge(Qg) | 22nC@10V | |
| Vgs | ±25V | |
| Type | P-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This P−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH technology. This very high density process is especially tailored to minimize on−state resistance and optimized for superior switching performance.
Features
AI Translation
- Max rDS(on)=67 mΩ at VGS=-10 Vz , ID=-4.4 A
- Max rDS(on)=89 mΩ at VGS=-6 V, ID=-3.6 A
- Very Low RDS−On Mid Voltage P Channel Silicon Technology Optimised for Low Qg
- This Product is Optimised for Fast Switching Applications as well as Load Switch Applications
- 100% UIL Tested
- These Devices are Pb−Free and are RoHS Compliant
Applications
AI Translation
- Active Clamp Switch
- Load Switch
C463243 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| XR20P10D | XNRUSEMI | PDFN-8L(3.3x3.3) | 5,285 | $0.1865 $0.1963 | ||
| SQS201CENW-T1_GE3 | VISHAY | PowerPAK1212-8W | 6 | $ 1.0636 | ||
| YJQ15GP10A | YANGJIE | DFN3333-8L | 300 | $ 0.3421 | ||
| SISS73DN-T1-GE3 | VISHAY | PowerPAK1212-8S | 2,125 | $ 1.4863 | ||
| XRS15P10D | XNRUSEMI | PDFN-8L(3.3x3.3) | 225 | $0.1894 $0.1993 | ||
| AGM85P10AP | AGMSEMI | PDFN-8(3.3x3.3) | 665 | $ 0.2496 | ||
| AGM150P10AP | AGMSEMI | PDFN-8(3.3x3.3) | 0 | $ 0.245 | ||
| SISS71DN-T1-GE3 | VISHAY | PowerPAK1212-8S | 0 | $ 1.5487 |