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DIODES DMN3033LSD-13
| Manufacturer | |
| MPN | DMN3033LSD-13 |
| LCSC Part # | C461012 |
| Packaging | SO-8 |
| Customer # | |
| Key Attributes | MOSFET N-CH ARR 30V SO-8 |
| Datasheet | DIODES DMN3033LSD-13 |
| RoHS Compliance | 5 documents available |
| Alternative Parts | 9 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | DIODES | |
| Packaging | SO-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 114pF | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 6.9A | |
| RDS(on) | 27mΩ@4.5V | |
| Pd - Power Dissipation | 2W | |
| Gate Threshold Voltage (Vgs(th)) | 2.1V | |
| Type | N-Channel | |
| Configuration | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 92pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 725pF | |
| Gate Charge(Qg) | 13nC@10V | |
| Vgs | ±20V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | DIODES | |
| Packaging | SO-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 114pF | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 6.9A | |
| RDS(on) | 27mΩ@4.5V | |
| Pd - Power Dissipation | 2W |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.1V | |
| Type | N-Channel | |
| Configuration | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 92pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 725pF | |
| Gate Charge(Qg) | 13nC@10V | |
| Vgs | ±20V |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This MOSFET is designed to minimize on-resistance R<sub>DS(ON)</sub> while maintaining excellent switching performance, making it ideal for high-efficiency power management applications.
Features
AI Translation
- Dual N-Channel MOSFET
- Low on-resistance
- Low gate threshold voltage
- Low input capacitance
- Fast switching speed
- Low input/output leakage current
- Fully lead-free and RoHS compliant
- Halogen- and antimony-free, "Green" device
- AEC-Q101 high-reliability qualified
Applications
AI Translation
- Backlighting
- Power management
- DC-DC converter
In-Stock: 5
5 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.3523 | $ 1.76 |
| 50+ | $ 0.2804 | $ 14.02 |
| 150+ | $ 0.2495 | $ 37.43 |
| 500+ | $ 0.2111 | $ 105.55 |
| 2,500+ | $ 0.1939 | $ 484.75 |
| 5,000+ | $ 0.1837 | $ 918.50 |
Standard Packaging2500/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | DIODES | |
| Packaging | SO-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 114pF | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 6.9A | |
| RDS(on) | 27mΩ@4.5V | |
| Pd - Power Dissipation | 2W | |
| Gate Threshold Voltage (Vgs(th)) | 2.1V | |
| Type | N-Channel | |
| Configuration | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 92pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 725pF | |
| Gate Charge(Qg) | 13nC@10V | |
| Vgs | ±20V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | DIODES | |
| Packaging | SO-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 114pF | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 6.9A | |
| RDS(on) | 27mΩ@4.5V | |
| Pd - Power Dissipation | 2W |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.1V | |
| Type | N-Channel | |
| Configuration | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 92pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 725pF | |
| Gate Charge(Qg) | 13nC@10V | |
| Vgs | ±20V |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This MOSFET is designed to minimize on-resistance R<sub>DS(ON)</sub> while maintaining excellent switching performance, making it ideal for high-efficiency power management applications.
Features
AI Translation
- Dual N-Channel MOSFET
- Low on-resistance
- Low gate threshold voltage
- Low input capacitance
- Fast switching speed
- Low input/output leakage current
- Fully lead-free and RoHS compliant
- Halogen- and antimony-free, "Green" device
- AEC-Q101 high-reliability qualified
Applications
AI Translation
- Backlighting
- Power management
- DC-DC converter
C461012 EasyEDA Library
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Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| WSP4812 | Winsok Semicon | SOP-8 | 30 | $0.1594 $0.1771 | ||
| WSP4884 | Winsok Semicon | SOP-8 | 1,245 | $0.2228 $0.2475 | ||
| NCE60ND08S | NCE | SOP-8 | 67 | $ 0.8339 | ||
| ES4812 | ETERNAL | SOP-8 | 10 | $ 0.0967 | ||
| WSP4888 | Winsok Semicon | SOP-8 | 2,930 | $0.2134 $0.2371 | ||
| CEM4228&30V-VB | VBsemi Elec | SO-8 | 85 | $0.3441 $0.4048 | ||
| AO4832 | UMW | SOP-8 | 1,645 | $ 0.1223 | ||
| AO4884-MS | MSKSEMI | SOP-8 | 4,530 | $ 0.1892 | ||
| DMN3033LSDQ-13 | DIODES | SO-8 | 0 | $ 0.6191 |