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UMW IRFR3410TR(UMW)
| Manufacturer | UMWAsian Brands |
| MPN | IRFR3410TR(UMW) |
| LCSC Part # | C42420620 |
| Packaging | TO-252 |
| Customer # | |
| Key Attributes | MOSFET N-CH 100V 30A TO-252 |
| Datasheet | UMW IRFR3410TR(UMW) |
| RoHS Compliance | 2 documents available |
| Alternative Parts | 3 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | UMW | |
| Packaging | TO-252 | |
| Output Capacitance(Coss) | 225pF | |
| Ciss-Input Capacitance | 2.55nF | |
| Pd - Power Dissipation | 70W | |
| Configuration | Standalone | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 30A | |
| Reverse Transfer Capacitance (Crss) | 205pF | |
| RDS(on) | 30mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 55nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | UMW | |
| Packaging | TO-252 | |
| Output Capacitance(Coss) | 225pF | |
| Ciss-Input Capacitance | 2.55nF | |
| Pd - Power Dissipation | 70W | |
| Configuration | Standalone | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 30A | |
| Reverse Transfer Capacitance (Crss) | 205pF | |
| RDS(on) | 30mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 55nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
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Introduction
AI Translation
IRFR3410 employs advanced trench technology to deliver excellent on-resistance RDS(ON) and low gate charge, making it suitable for a wide range of applications.
Features
AI Translation
- Drain-source voltage V<sub>DS</sub> = 100 V, drain current I<sub>D</sub> = 30 A
- On-resistance R<sub>DS(ON)</sub> < 30 mΩ at gate-source voltage V<sub>GS</sub> = 10 V
- High-density cell design for reduced R<sub>DS(ON)</sub>
- Fully characterized avalanche voltage and current
- High single-pulse avalanche energy E<sub>AS</sub> with excellent stability and consistency
- Superior thermal dissipation package
Applications
AI Translation
- Power switch applications
- Hard switching and high-frequency circuits
- Uninterruptible power supplies
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | UMW | |
| Packaging | TO-252 | |
| Output Capacitance(Coss) | 225pF | |
| Ciss-Input Capacitance | 2.55nF | |
| Pd - Power Dissipation | 70W | |
| Configuration | Standalone | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 30A | |
| Reverse Transfer Capacitance (Crss) | 205pF | |
| RDS(on) | 30mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 55nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | UMW | |
| Packaging | TO-252 | |
| Output Capacitance(Coss) | 225pF | |
| Ciss-Input Capacitance | 2.55nF | |
| Pd - Power Dissipation | 70W | |
| Configuration | Standalone | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 30A | |
| Reverse Transfer Capacitance (Crss) | 205pF | |
| RDS(on) | 30mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 55nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
IRFR3410 employs advanced trench technology to deliver excellent on-resistance RDS(ON) and low gate charge, making it suitable for a wide range of applications.
Features
AI Translation
- Drain-source voltage V<sub>DS</sub> = 100 V, drain current I<sub>D</sub> = 30 A
- On-resistance R<sub>DS(ON)</sub> < 30 mΩ at gate-source voltage V<sub>GS</sub> = 10 V
- High-density cell design for reduced R<sub>DS(ON)</sub>
- Fully characterized avalanche voltage and current
- High single-pulse avalanche energy E<sub>AS</sub> with excellent stability and consistency
- Superior thermal dissipation package
Applications
AI Translation
- Power switch applications
- Hard switching and high-frequency circuits
- Uninterruptible power supplies
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |