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Nexperia PMXB350UPE147 product image
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Nexperia PMXB350UPE147

Manufacturer
Nexperia
MPN
PMXB350UPE147
LCSC Part #
C3283149
Packaging
-
Customer #
Key Attributes
20V 1.2A 950mV 930mW 447mΩ@4.5V 1 P-Channel P-Channel Single FETs, MOSFETs
DatasheetNexperia PMXB350UPE147
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QtyUnit Price(Reference Only)Total Amount
1+$ 0.0663$ 0.07
200+$ 0.0257$ 5.14
500+$ 0.0248$ 12.40
1,000+$ 0.0243$ 24.30
Standard Packaging5000/Full Bag
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerNexperia
Packaging-
Operating Temperature-55℃~+150℃
Drain to Source Voltage20V
Configuration-
Output Capacitance(Coss)16.5pF
Current - Continuous Drain(Id)1.2A
Gate Threshold Voltage (Vgs(th))950mV
Pd - Power Dissipation930mW
Reverse Transfer Capacitance (Crss@Vds)12.2pF
RDS(on)447mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)116pF
Gate Charge(Qg)2.3nC@4.5V
TypeP-Channel
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Introduction

AI Translation

P-channel enhancement mode FET using trench MOSFET technology, housed in a leadless ultra-compact DFN1010D-3 (SOT1215) SMD plastic package.

Features

AI Translation
  • Trench MOSFET technology
  • Leadless ultra-small ultra-thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
  • Exposed drain pad for excellent thermal dissipation
  • ESD protection 1 kV HBM
  • Drain-source on-state resistance RDSon = 350 mΩ

Applications

AI Translation
  • High-side load switch and charge switch for portable devices
  • Power management for battery-powered portable devices
  • LED driver
  • DC-DC converter