Images for reference only
EDA ModelsEasyEDA
onsemi SI4963DY
| Manufacturer | |
| MPN | SI4963DY |
| LCSC Part # | C3279869 |
| Packaging | SOIC-8 |
| Customer # | |
| Key Attributes | Dual P-Channel, Current: -6.2A, Voltage: -20V |
| Datasheet | onsemi SI4963DY |
| RoHS Compliance | 3 documents available |
| Alternative Parts | 5 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | SOIC-8 | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 6.2A | |
| Pd - Power Dissipation | 1.6W | |
| RDS(on) | 50mΩ@2.5V | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Type | P-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 150pF | |
| Number | 2 P-Channel | |
| Input Capacitance(Ciss) | 1.456nF | |
| Gate Charge(Qg) | 20nC@4.5V | |
| Operating Temperature | -55℃~+175℃ | |
| Output Capacitance(Coss) | 300pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | SOIC-8 | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 6.2A | |
| Pd - Power Dissipation | 1.6W | |
| RDS(on) | 50mΩ@2.5V | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Type | Description | |
|---|---|---|
| Type | P-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 150pF | |
| Number | 2 P-Channel | |
| Input Capacitance(Ciss) | 1.456nF | |
| Gate Charge(Qg) | 20nC@4.5V | |
| Operating Temperature | -55℃~+175℃ | |
| Output Capacitance(Coss) | 300pF |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This 2.5V specified P-channel MOSFET is a rugged gate version of the advanced PowerTrench process. It is optimized for power management applications with a wide range of gate drive voltages (2.5V - 12V).
Features
AI Translation
- RDS(ON) = 50 mΩ at VGS = -2.5V
- 6.2A, -20V, RDS(ON) = 33 mΩ at VGS = -4.5V
- Extended VGSS range (±12V) for battery applications
- Low gate charge
- Ultra-low RDS(ON) using high-performance trench technology
- High power and current handling capability
Applications
AI Translation
- Load Switch - Motor Drive - DC/DC Conversion - Power Management
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
Out of Stock
Notify Me
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.0544 | $ 0.05 |
| 200+ | $ 0.0211 | $ 4.22 |
| 500+ | $ 0.0203 | $ 10.15 |
| 1,000+ | $ 0.02 | $ 20.00 |
Standard Packaging2500/Full Reel | ||
Better price for more quantity?
$
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | SOIC-8 | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 6.2A | |
| Pd - Power Dissipation | 1.6W | |
| RDS(on) | 50mΩ@2.5V | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Type | P-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 150pF | |
| Number | 2 P-Channel | |
| Input Capacitance(Ciss) | 1.456nF | |
| Gate Charge(Qg) | 20nC@4.5V | |
| Operating Temperature | -55℃~+175℃ | |
| Output Capacitance(Coss) | 300pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | SOIC-8 | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 6.2A | |
| Pd - Power Dissipation | 1.6W | |
| RDS(on) | 50mΩ@2.5V | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Type | Description | |
|---|---|---|
| Type | P-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 150pF | |
| Number | 2 P-Channel | |
| Input Capacitance(Ciss) | 1.456nF | |
| Gate Charge(Qg) | 20nC@4.5V | |
| Operating Temperature | -55℃~+175℃ | |
| Output Capacitance(Coss) | 300pF |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This 2.5V specified P-channel MOSFET is a rugged gate version of the advanced PowerTrench process. It is optimized for power management applications with a wide range of gate drive voltages (2.5V - 12V).
Features
AI Translation
- RDS(ON) = 50 mΩ at VGS = -2.5V
- 6.2A, -20V, RDS(ON) = 33 mΩ at VGS = -4.5V
- Extended VGSS range (±12V) for battery applications
- Low gate charge
- Ultra-low RDS(ON) using high-performance trench technology
- High power and current handling capability
Applications
AI Translation
- Load Switch - Motor Drive - DC/DC Conversion - Power Management
C3279869 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Alternative Type | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|---|
| FH8913P | XIN FEI HONG | Similar | SO-8 | 3,815 | $ 0.0942 | ||
| SP30P16DP8 | Siliup | Similar | SOP-8L | 3,890 | $0.1035 $0.1089 | ||
| SP30P13DP8 | Siliup | Similar | SOP-8L | 4,050 | $0.0814 $0.0904 | ||
| AO4813 | AOS | Similar | SOIC-8 | 834 | $ 0.4819 | ||
| PTS3110D | HT(Shenzhen Jinyu Semicon) | Similar | SOP-8 | 2,680 | $0.1469 $0.1632 |
5 more alternative parts.View all substitutes