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onsemi FQD8P10TM

Manufacturer
onsemi
MPN
FQD8P10TM
LCSC Part #
C241842
Packaging
DPAK
Customer #
Key Attributes
MOSFET P-CH 100V 6.6A DPAK
Datasheetonsemi FQD8P10TM
RoHS Compliance2 documents available
Alternative Parts5
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingDPAK
Output Capacitance(Coss)155pF
Ciss-Input Capacitance470pF
Pd - Power Dissipation44W
Configuration-
Operating Temperature-55℃~+150℃
Drain to Source Voltage100V
Current - Continuous Drain(Id)6.6A
Reverse Transfer Capacitance (Crss)40pF
RDS(on)530mΩ@10V
Number1 P-Channel
Gate Charge(Qg)15nC@10V
Vgs±30V
Gate Threshold Voltage (Vgs(th))4V
TypeP-Channel
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Introduction

AI Translation

This P-Channel enhancement mode power MOSFET is produced using proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Features

AI Translation
  • -6.6 A, -100 V, RDS(on)=530 mΩ (Max) @ VGS = -10 V, ID=-3.3 A
  • Low Gate Charge (Typ. 12 nC)
  • Low Crss (Typ. 30 pF)
  • 100% Avalanche Tested

Applications

AI Translation
  • Switched mode power supplies
  • Audio amplifier
  • DC motor control
  • Variable switching power applications