NCE NCE60NP2016G

Manufacturer	NCEAsian Brands
MPN	NCE60NP2016G
LCSC Part #	C22395083
Packaging	DFN-8L(5x6)
Customer #
Key Attributes	42W 60V 1 N-Channel + 1 P-Channel N-Channel + P-Channel DFN-8L(5x6) Single FETs, MOSFETs
Datasheet	NCE NCE60NP2016G

Products Specifications

All

Type	Description
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	NCE
Packaging	DFN-8L(5x6)
Output Capacitance(Coss)	61.2pF;73.7pF
Pd - Power Dissipation	42W
Configuration	-
Drain to Source Voltage	60V
Operating Temperature	-55℃~+150℃
Current - Continuous Drain(Id)	20A;16A
Gate Threshold Voltage (Vgs(th))	1.6V;1.5V
RDS(on)	23mΩ@10V;52mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)	58.8pF;58.2pF
Number	1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)	973.2pF;1.108nF
Gate Charge(Qg)	25nC;23.4nC
Vgs	±20V
Type	N-Channel + P-Channel

Type	Description
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	NCE
Packaging	DFN-8L(5x6)
Output Capacitance(Coss)	61.2pF;73.7pF
Pd - Power Dissipation	42W
Configuration	-
Drain to Source Voltage	60V
Operating Temperature	-55℃~+150℃
Current - Continuous Drain(Id)	20A;16A

Type	Description
Gate Threshold Voltage (Vgs(th))	1.6V;1.5V
RDS(on)	23mΩ@10V;52mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)	58.8pF;58.2pF
Number	1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)	973.2pF;1.108nF
Gate Charge(Qg)	25nC;23.4nC
Vgs	±20V
Type	N-Channel + P-Channel

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Qty	Unit Price(Reference Only)	Total Amount
1+	$ 0.4466	$ 0.45
200+	$ 0.1783	$ 35.66
500+	$ 0.1723	$ 86.15
1,000+	$ 0.1694	$ 169.40
Standard Packaging3000/Full Reel

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All

Type	Description
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	NCE
Packaging	DFN-8L(5x6)
Output Capacitance(Coss)	61.2pF;73.7pF
Pd - Power Dissipation	42W
Configuration	-
Drain to Source Voltage	60V
Operating Temperature	-55℃~+150℃
Current - Continuous Drain(Id)	20A;16A
Gate Threshold Voltage (Vgs(th))	1.6V;1.5V
RDS(on)	23mΩ@10V;52mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)	58.8pF;58.2pF
Number	1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)	973.2pF;1.108nF
Gate Charge(Qg)	25nC;23.4nC
Vgs	±20V
Type	N-Channel + P-Channel

Type	Description
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	NCE
Packaging	DFN-8L(5x6)
Output Capacitance(Coss)	61.2pF;73.7pF
Pd - Power Dissipation	42W
Configuration	-
Drain to Source Voltage	60V
Operating Temperature	-55℃~+150℃
Current - Continuous Drain(Id)	20A;16A

Type	Description
Gate Threshold Voltage (Vgs(th))	1.6V;1.5V
RDS(on)	23mΩ@10V;52mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)	58.8pF;58.2pF
Number	1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)	973.2pF;1.108nF
Gate Charge(Qg)	25nC;23.4nC
Vgs	±20V
Type	N-Channel + P-Channel