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JSMSEMI AM3407E3R-JSM product image
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JSMSEMI AM3407E3R-JSM

Manufacturer
JSMSEMIAsian Brands
MPN
AM3407E3R-JSM
LCSC Part #
C18192532
Packaging
SOT-23
Customer #
Key Attributes
30V 4.3A 1.2V 1.5W 78mΩ@2.5V 1 P-Channel P-Channel SOT-23 Single FETs, MOSFETs RoHS
DatasheetJSMSEMI AM3407E3R-JSM
Alternative Parts20
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QtyUnit Price(Reference Only)Total Amount
1+$ 0.1068$ 0.11
200+$ 0.0426$ 8.52
500+$ 0.0412$ 20.60
1,000+$ 0.0405$ 40.50
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerJSMSEMI
PackagingSOT-23
Operating Temperature-
Drain to Source Voltage30V
Output Capacitance(Coss)280pF
Current - Continuous Drain(Id)4.3A
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation1.5W
Reverse Transfer Capacitance (Crss@Vds)102pF
RDS(on)78mΩ@2.5V
Number1 P-Channel
Input Capacitance(Ciss)672pF
Gate Charge(Qg)6.2nC@4.5V
TypeP-Channel
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Introduction

AI Translation

P-channel logic-level enhancement-mode power MOSFETs fabricated using advanced high cell density trench technology. This high-density process is specifically designed to minimize on-resistance. These devices are particularly suited for low-voltage applications requiring low in-line power dissipation in ultra-compact SMT packages.

Features

AI Translation
  • -30V/-4.3A, RDS(ON) = 44mΩ (typ.) @ VGS = -10V
  • -30V/-3.5A, RDS(ON) = 50mΩ (typ.) @ VGS = -4.5V
  • -30V/-2.5A, RDS(ON) = 65mΩ (typ.) @ VGS = -2.5V
  • Ultra-low RDS(ON) optimized design
  • Excellent on-resistance and maximum DC current capability
  • Fully RoHS compliant
  • SOT23-3 package

Applications

AI Translation
  • Power Management
  • Portable Devices
  • DC/DC Converters
  • Load Switches
  • Digital Cameras
  • LCD Monitor Inverters

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